Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction von Perova, T. S., Wasyluk, J., Lyutovich, K., Kasper, E., Oehme, M., Rode, K., Waldron, A.

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Strain adjustment with thin virtual substrates von Kasper, E., Lyutovich, K.

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Strained Si/SiGe MOS technology: Improving gate dielectric integrity von Olsen, S.H., Yan, L., Agaiby, R., Escobedo-Cousin, E., O’Neill, A.G., Hellström, P.-E., Östling, M., Lyutovich, K., Kasper, E., Claeys, C., Parker, E.H.C.

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MBE growth of low-defect Si layers highly doped with Sb von Werner, J., Oehme, M., Kirfel, O., Lyutovich, K., Kasper, E.

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Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy von Perova, T.S., Moore, R.A., Lyutovich, K., Oehme, M., Kasper, E.

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X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers von Burle, N., Escoubas, S., Kasper, E., Werner, J., Oehme, M., Lyutovich, K.

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Reduced self-heating by strained silicon substrate engineering von O’Neill, A., Agaiby, R., Olsen, S., Yang, Y., Hellstrom, P.-E., Ostling, M., Oehme, M., Lyutovich, K., Kasper, E., Eneman, G., Verheyen, P., Loo, R., Claeys, C., Fiegna, C., Sangiorgi, E.

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Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures von Hofer, C., Teichert, C., Oehme, M., Werner, J., Lyutovich, K., Kasper, E.

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs von von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.

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Ion-assisted MBE for misfit-dislocation templates serving ordered growth of SiGe islands von Lyutovich, K., Oehme, M., Werner, J., Bahouchi, B., Kasper, E., Hofer, C., Teichert, C.

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Defect imaging in ultra-thin SiGe (100) strain relaxed buffers von Werner, J., Lyutovich, K., Parry, C. P.

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Interplay of dislocation network and island arrangement in SiGe films grown on Si(001) von Teichert, C, Hofer, C, Lyutovich, K, Bauer, M, Kasper, E

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Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE von Werner, J., Oehme, M., Lyutovich, K., Kasper, E., Hofer, C., Teichert, C.

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Electrochemical defect revealing in thin SiGe layers von Werner, J., Schalberger, P., Oehme, M., Lyutovich, K., Kasper, E.

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Relaxed SiGe buffers with thicknesses below 0.1 μm von BAUER, M, LYUTOVICH, K, OEHME, M, KASPER, E, HERZOG, H.-J, ERNST, F

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Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates von Perova, T.S., Lyutovich, K., Kasper, E., Waldron, A., Oehme, M., Moore, R.A.

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Ion bombardment induced morphology modifications on self-organized semiconductor surfaces von Hofer, C., Abermann, S., Teichert, C., Bobek, T., Kurz, H., Lyutovich, K., Kasper, E.

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High Ge content photodetectors on thin SiGe buffers von Bauer, M, Schöllhorn, C, Lyutovich, K, Kasper, E, Jutzi, M, Berroth, M

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X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽100 nm) using a low temperature growth step von Ni, W.-X, Lyutovich, K, Alami, J, Tengstedt, C, Bauer, M, Kasper, E

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Ion assisted MBE growth of SiGe nanostructures von Bauer, M, Oehme, M, Lyutovich, K, Kasper, E

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