A survey of acceptor dopants for β-Ga2O3 von Lyons, John L

Volltext

Self-trapped holes and polaronic acceptors in ultrawide-bandgap oxides von Lyons, John L.

Volltext

Deep polaronic acceptors in LiGa5O8 von Lyons, John L.

Volltext

Effective Donor Dopants for Lead Halide Perovskites von Lyons, John L

Volltext

Transformational Collaborative Outcomes Management: Managing the Business of Personal Change von Lyons, John S

Volltext

Material Considerations for Fused-Filament Fabrication of Solid Dosage Forms von Fuenmayor, Evert, Forde, Martin, Healy, Andrew V, Devine, Declan M, Lyons, John G, McConville, Christopher, Major, Ian

Volltext

A p-type dopable ultrawide-bandgap oxide von Lyons, John L, Janotti, Anderson

Volltext

Quasicubic model for metal halide perovskite nanocrystals von Sercel, Peter C., Lyons, John L., Bernstein, Noam, Efros, Alexander L.

Volltext

Bright triplet excitons in caesium lead halide perovskites von Becker, Michael A., Vaxenburg, Roman, Nedelcu, Georgian, Sercel, Peter C., Shabaev, Andrew, Mehl, Michael J., Michopoulos, John G., Lambrakos, Samuel G., Bernstein, Noam, Lyons, John L., Stöferle, Thilo, Mahrt, Rainer F., Kovalenko, Maksym V., Norris, David J., Rainò, Gabriele, Efros, Alexander L.

Volltext

Exciton Fine Structure in Perovskite Nanocrystals von Sercel, Peter C, Lyons, John L, Wickramaratne, Darshana, Vaxenburg, Roman, Bernstein, Noam, Efros, Alexander L

Volltext

A first-principles understanding of point defects and impurities in GaN von Lyons, John L., Wickramaratne, Darshana, Van de Walle, Chris G.

Volltext

Shallow versus deep nature of Mg acceptors in nitride semiconductors von Lyons, John L, Janotti, Anderson, Van de Walle, Chris G

Volltext

Fused Filament Fabrication of PEEK: A Review of Process-Structure-Property Relationships von Zanjanijam, Ali Reza, Major, Ian, Lyons, John G., Lafont, Ugo, Devine, Declan M.

Volltext

Computationally predicted energies and properties of defects in GaN von Lyons, John L., Van de Walle, Chris G.

Volltext

First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO von Alkauskas, Audrius, Lyons, John L, Steiauf, Daniel, Van de Walle, Chris G

Volltext

Donor doping of corundum (AlxGa1−x)2O3 von Wickramaratne, Darshana, Varley, Joel B., Lyons, John L.

Volltext

First-Principles Calculations of Point Defects for Quantum Technologies von Dreyer, Cyrus E, Alkauskas, Audrius, Lyons, John L, Janotti, Anderson, Van de Walle, Chris G

Volltext

Infrasound from giant bubbles during explosive submarine eruptions von Lyons, John J., Haney, Matthew M., Fee, David, Wech, Aaron G., Waythomas, Christopher F.

Volltext

Second-Generation HSP90 Inhibitor Onalespib Blocks mRNA Splicing of Androgen Receptor Variant 7 in Prostate Cancer Cells von Ferraldeschi, Roberta, Welti, Jonathan, Powers, Marissa V, Yuan, Wei, Smyth, Tomoko, Seed, George, Riisnaes, Ruth, Hedayat, Somaieh, Wang, Hannah, Crespo, Mateus, Nava Rodrigues, Daniel, Figueiredo, Ines, Miranda, Susana, Carreira, Suzanne, Lyons, John F, Sharp, Swee, Plymate, Stephen R, Attard, Gerhardt, Wallis, Nicola, Workman, Paul, de Bono, Johann S

Volltext

Deep levels in cesium lead bromide from native defects and hydrogen von Swift, Michael W, Lyons, John L

Volltext