Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials von Li, Yu, Long, Shibing, Liu, Qi, Lv, Hangbing, Liu, Ming

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A highly CMOS compatible hafnia-based ferroelectric diode von Luo, Qing, Cheng, Yan, Yang, Jianguo, Cao, Rongrong, Ma, Haili, Yang, Yang, Huang, Rong, Wei, Wei, Zheng, Yonghui, Gong, Tiancheng, Yu, Jie, Xu, Xiaoxin, Yuan, Peng, Li, Xiaoyan, Tai, Lu, Yu, Haoran, Shang, Dashan, Liu, Qi, Yu, Bing, Ren, Qiwei, Lv, Hangbing, Liu, Ming

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Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging von Zhang, Ying, Mao, Ge-Qi, Zhao, Xiaolong, Li, Yu, Zhang, Meiyun, Wu, Zuheng, Wu, Wei, Sun, Huajun, Guo, Yizhong, Wang, Lihua, Zhang, Xumeng, Liu, Qi, Lv, Hangbing, Xue, Kan-Hao, Xu, Guangwei, Miao, Xiangshui, Long, Shibing, Liu, Ming

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Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices von Banerjee, Writam, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

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Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory von Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming

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Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films von Cao, Rongrong, Wang, Yan, Zhao, Shengjie, Yang, Yang, Zhao, Xiaolong, Wang, Wei, Zhang, Xumeng, Lv, Hangbing, Liu, Qi, Liu, Ming

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Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology von Sun, Haitao, Liu, Qi, Li, Congfei, Long, Shibing, Lv, Hangbing, Bi, Chong, Huo, Zongliang, Li, Ling, Liu, Ming

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Oxide‐Based Electrolyte‐Gated Transistors for Spatiotemporal Information Processing von Li, Yue, Lu, Jikai, Shang, Dashan, Liu, Qi, Wu, Shuyu, Wu, Zuheng, Zhang, Xumeng, Yang, Jianguo, Wang, Zhongrui, Lv, Hangbing, Liu, Ming

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Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM von Liu, Qi, Sun, Jun, Lv, Hangbing, Long, Shibing, Yin, Kuibo, Wan, Neng, Li, Yingtao, Sun, Litao, Liu, Ming

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Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode von Liu, Qi, Long, Shibing, Lv, Hangbing, Wang, Wei, Niu, Jiebin, Huo, Zongliang, Chen, Junning, Liu, Ming

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Analysis of the contact resistance in amorphous InGaZnO thin film transistors von Wang, Wei, Li, Ling, Lu, Congyan, Liu, Yu, Lv, Hangbing, Xu, Guangwei, Ji, Zhuoyu, Liu, Ming

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Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode von Cao, Rongrong, Liu, Qi, Liu, Ming, Song, Bing, Shang, Dashan, Yang, Yang, Luo, Qing, Wu, Shuyu, Li, Yue, Wang, Yan, Lv, Hangbing

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Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor von Zhang, Xumeng, Liu, Sen, Zhao, Xiaolong, Wu, Facai, Wu, Quantan, Wang, Wei, Cao, Rongrong, Fang, Yilin, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming

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Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer von Zhao, Xiaolong, Liu, Sen, Niu, Jiebin, Liao, Lei, Liu, Qi, Xiao, Xiangheng, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Li, Wenqing, Si, Shuyao, Liu, Ming

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Wake‐Up Effect in HfO2‐Based Ferroelectric Films von Jiang, Pengfei, Luo, Qing, Xu, Xiaoxin, Gong, Tiancheng, Yuan, Peng, Wang, Yuan, Gao, Zhaomeng, Wei, Wei, Tai, Lu, Lv, Hangbing

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Thermoelectric Seebeck effect in oxide-based resistive switching memory von Wang, Ming, Bi, Chong, Li, Ling, Long, Shibing, Liu, Qi, Lv, Hangbing, Lu, Nianduan, Sun, Pengxiao, Liu, Ming

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Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application von Luo, Qing, Zhang, Xumeng, Hu, Yuan, Gong, Tiancheng, Xu, Xiaoxin, Yuan, Peng, Ma, Haili, Dong, Danian, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming

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Recommended Methods to Study Resistive Switching Devices von Lanza, Mario, Wong, H.‐S. Philip, Pop, Eric, Ielmini, Daniele, Strukov, Dimitri, Regan, Brian C., Larcher, Luca, Villena, Marco A., Yang, J. Joshua, Goux, Ludovic, Belmonte, Attilio, Yang, Yuchao, Puglisi, Francesco M., Kang, Jinfeng, Magyari‐Köpe, Blanka, Yalon, Eilam, Kenyon, Anthony, Buckwell, Mark, Mehonic, Adnan, Shluger, Alexander, Li, Haitong, Hou, Tuo‐Hung, Hudec, Boris, Akinwande, Deji, Ge, Ruijing, Ambrogio, Stefano, Roldan, Juan B., Miranda, Enrique, Suñe, Jordi, Pey, Kin Leong, Wu, Xing, Raghavan, Nagarajan, Wu, Ernest, Lu, Wei D., Navarro, Gabriele, Zhang, Weidong, Wu, Huaqiang, Li, Runwei, Holleitner, Alexander, Wurstbauer, Ursula, Lemme, Max C., Liu, Ming, Long, Shibing, Liu, Qi, Lv, Hangbing, Padovani, Andrea, Pavan, Paolo, Valov, Ilia, Jing, Xu, Han, Tingting, Zhu, Kaichen, Chen, Shaochuan, Hui, Fei, Shi, Yuanyuan

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Conductance Quantization in Resistive Random Access Memory von Li, Yang, Long, Shibing, Liu, Yang, Hu, Chen, Teng, Jiao, Liu, Qi, Lv, Hangbing, Suñé, Jordi, Liu, Ming

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Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device von Sun, Haitao, Liu, Qi, Long, Shibing, Lv, Hangbing, Banerjee, Writam, Liu, Ming

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