Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates von Pan, Lei, Dong, Xun, Li, Zhonghui, Luo, Weike, Ni, Jinyu

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Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD von Luo, Weike, Li, Liang, Li, Zhonghui, Yang, Qiankun, Zhang, Dongguo, Dong, Xun, Peng, Daqing, Pan, Lei, Li, Chuanhao, Liu, Bin, Zhong, Rong

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Improvement of the interfaces in AlGaN/AlN superlattice grown by NH3 flow-rate modulation epitaxy von Luo, Weike, Bin Liu, Li, Zhonghui, Yang, Feng, Li, Zhenhua, Yang, Qiankun, Gao, Hanchao, Wang, Kechao, Zhang, Rong

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A study of GaN regrowth on the micro-faceted GaN template formed by in situ HCl etching von Luo, Weike, Li, Liang, Li, Zhonghui, Xu, Xiaojun, Wu, Jiejun, Liu, Xiangshun, Zhang, Guoyi

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The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy von Luo, Weike, Wu, Jiejun, Goldsmith, John, Du, Yanhao, Yu, Tongjun, Yang, Zhijian, Zhang, Guoyi

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High-quantum-efficiency ultraviolet solar-blind AlGaN photocathode detector with a sharp spectral sensitivity threshold at 300  nm von Tang, Guanghua, Yan, Feng, Chen, Xinlong, Luo, Weike

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OA10 Survival analysis of 496 patients with systemic lupus erythematosus with up to 40 years follow-up shows improved survival in patients diagnosed in more recent time-periods von Luo, Weike, Farinha, Filipa, Isenberg, David A, Rahman, Anisur

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Survival analysis of mortality and development of lupus nephritis in patients with systemic lupus erythematosus up to 40 years of follow-up von Luo, Weike, Farinha, Filipa, Isenberg, David A, Rahman, Anisur

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Factors associated with cardiovascular events in systemic lupus erythematosus in a monocentric cohort with up to 40 years of follow-up von Farina, Nicola, Webster, Jemma, Luo, Weike, Garelick, Daniela, Pinto, Sara Moreira, Isenberg, David, Rahman, Anisur

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Low stress AlGaN/GaN heterojuction with AlGaN buffer grown on 6-inch semi-insulating SiC substrate von Peng, Daqing, Li, Zhonghui, Li, Chuanhao, Yang, Qiankun, Zhang, Dongguo, Luo, Weike, Dong, Xun

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Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology von Zhang, Dongguo, Li, Zhonghui, Guo, Huaixin, Peng, Daqing, Yang, Qiankun, Li, Chuanhao, Luo, Weike

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Al0.1Ga0.9N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown von You, Haifan, Wang, Haiping, Luo, Weike, Wang, YiWang, Liu, Xinghua, Shao, Zhenguang, Chen, Dunjun, Lu, Hai, Zhang, Rong, Zheng, Youdou

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Al 0.1 Ga 0.9 N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown von You, Haifan, Wang, Haiping, Luo, Weike, Wang, YiWang, Liu, Xinghua, Shao, Zhenguang, Chen, Dunjun, Lu, Hai, Zhang, Rong, Zheng, Youdou

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High-Performance Al₀.₁Ga₀.₉N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations von You, Haifan, Wang, Haiping, Luo, Weike, Wang, Yiwang, Liu, Xinghua, Lu, Hai, Zhang, Rong, Zheng, Youdou, Chen, Dunjun

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A Systematic Review of the safety of non-TNF inhibitor biologic and targeted synthetic drugs in rheumatic disease in pregnancy von Nguyen, Hanh, Ahmed, Kawser, Luo, Weike, Flint, Julia, Giles, Ian

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Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 106 von You, Haifan, Wang, Haiping, Luo, Weike, Wang, Yiwang, Liu, Xinghua, Shao, Zhenguang, Chen, Dunjun, Lu, Hai, Zhang, Rong, Zheng, Youdou

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EGFR-activated myofibroblasts promote metastasis of pancreatic cancer von Mucciolo, Gianluca, Araos Henríquez, Joaquín, Jihad, Muntadher, Pinto Teles, Sara, Manansala, Judhell S., Li, Wenlong, Ashworth, Sally, Lloyd, Eloise G., Cheng, Priscilla S.W., Luo, Weike, Anand, Akanksha, Sawle, Ashley, Piskorz, Anna, Biffi, Giulia

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Influence of surface step width of 4H-SiC substrates on the GaN crystal quality von Yang, Qiankun, Zhang, Dongguo, Li, Zhonghui, Luo, Weike, Pan, Lei

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Growth of thin AlN nucleation layer and its impact on GaN-on-SiC heteroepitaxy von Li, Chuanhao, Li, Zhonghui, Peng, Daqing, Yang, Qiankun, Zhang, Dongguo, Luo, Weike, Pan, Chuanqi

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Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology von Zhang, Dongguo, Li, Zhonghui, Yang, Qiankun, Peng, Daqing, Li, Chuanhao, Luo, Weike, Dong, Xun

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