Scanning Spreading Resistance Microscopy for Doping Profile in Saddle-Fin Devices von Yang, Chia-Ming, Wei, Chen-Kang, Chen, Hsiu-Pin, Luo, Jian-Shing, Chang, Yu Jing, Wu, Tieh-Chiang, Lai, Chao-Sung

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In situ Growth of Fatigue-free SrBi2Ta2O9 Films by Pulsed Laser Ablation von Yang, Hung-Ming, Luo, Jian-Shing, Lin, Wen-Tai

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Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1−x−yGexCy von Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Shih, P. S., Pan, F. M.

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Localized epitaxial growth of hexagonal and cubic SiC films on Si by vacuum annealing von Luo, Jian-Shing, Lin, Wen-Tai

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Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films von Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Tsai, W. C.

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Effects of Mo-free C40 Ti(Si1−xGex)2 precursors and the thickness of an interposed Mo layer on the enhanced formation of C54 Ti(Si1−xGex)2 von Luo, Jian-Shing, Huang, Jun-Chieh, Lin, Wen-Tai, Chang, C. Y., Shih, P. S.

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Room temperature oxidation of Cu3Ge films grown on Si and Si1−xGex substrates von Liang, Hsuan-Han, Luo, Jian-Shing, Lin, Wen-Tai

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Room temperature oxidation of Cu3Ge and Cu3(Si1−xGex) on Si1−xGex von Liang, Hsuan-Han, Luo, Jian-Shing, Lin, Wen-Tai

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Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing von Chen, Da-Ren, Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Shih, P. S.

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Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300°C von LUO, J.-S, LIN, W.-T, CHANG, C. Y, SHIH, P. S

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Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing von LUO, J.-S, LIN, W.-T, CHANG, C. Y, TSAI, W. C

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Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing von Huang, Jun-Chieh, Luo, Jian-Shing, Lin, Wen-Tai, Chang, C Y, Shih, P S

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Pulsed KrF laser annealing of Mo/Si0.76Ge0.24 von Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y, Shih, P.S, Chang, T.C

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Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing von Luo, Jian-Shing, Hang, Yu-Lin, Lin, Wen-Tai, Chang, C. Y., Shih, P. S.

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Improvement of the (1 1 1) texture and microstructures of Cu films by pulsed laser annealing von Hsieh, Yung-wei, Luo, Jian-shing, Lin, Wen-tai, Chang, T C, Pan, F M

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Interfacial reactions of the Co/Si1-xGex system von LUO, J.-S, LIN, W.-T, CHANG, C. Y, TSAI, W. C, WANG, S. J

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Epitaxial growth of Pb(Zr,Ti)O3 films on Nd1.85Ce0.15CuO4−x films by pulsed laser ablation von Luo, Jian-Shing, Lin, Wen-Tai, Wu, Long

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Negative Bias Temperature Instability for Sputtering Modification in a TiN Diffusion Barrier of p+ Polysilicon Gate Stack in 50-nm DRAM Technology von Yang, Chia-Ming, Lee, Chung Yuan, Lin, Yi-Chun, Wang, Wei-Yao, Luo, Jian-Shing, Liew, San-Lin, Sung, Ching-Shan, Chiang, Hsiao-Lung, Hsiao, Chih-Yuan, Lai, Chao-Sung

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Room temperature oxidation of Cu(3)Ge films grown on Si and Si(1-x)Ge(x) substrates von Liang, Hsuan-Han, Luo, Jian-Shing, Lin, Wen-Tai

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Room temperature oxidation of Cu 3Ge films grown on Si and Si 1− xGe x substrates von Liang, Hsuan-Han, Luo, Jian-Shing, Lin, Wen-Tai

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