Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus von Luo, Zhe, Maassen, Jesse, Deng, Yexin, Du, Yuchen, Garrelts, Richard P., Lundstrom, Mark S, Ye, Peide D., Xu, Xianfan

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Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs von Koswatta, S.O., Lundstrom, M.S., Nikonov, D.E.

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Compact Models and the Physics of Nanoscale FETs von Lundstrom, Mark S., Antoniadis, Dimitri A.

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A computational study of the thermoelectric performance of ultrathin Bi2Te3 films von Maassen, Jesse, Lundstrom, Mark

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Effects of Surface Band Bending and Scattering on Thermoelectric Transport in Suspended Bismuth Telluride Nanoplates von Pettes, Michael Thompson, Maassen, Jesse, Jo, Insun, Lundstrom, Mark S, Shi, Li

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Thermal conductivity of bulk and thin-film silicon: A Landauer approach von Jeong, Changwook, Datta, Supriyo, Lundstrom, Mark

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On the calculation of Lorenz numbers for complex thermoelectric materials von Wang, Xufeng, Askarpour, Vahid, Maassen, Jesse, Lundstrom, Mark

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Sub-10 nm Carbon Nanotube Transistor von Franklin, Aaron D, Luisier, Mathieu, Han, Shu-Jen, Tulevski, George, Breslin, Chris M, Gignac, Lynne, Lundstrom, Mark S, Haensch, Wilfried

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Moore’s law: The journey ahead von Lundstrom, Mark S., Alam, Muhammad A.

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Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2 von Kayyalha, Morteza, Maassen, Jesse, Lundstrom, Mark, Shi, Li, Chen, Yong P.

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Bandstructure Effects in Silicon Nanowire Electron Transport von Neophytou, N., Paul, A., Lundstrom, M.S., Klimeck, G.

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Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors von Liang, Gengchiau, Neophytou, Neophytos, Nikonov, Dmitri E., Lundstrom, Mark S.

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Ballistic carbon nanotube field-effect transistors von Dai, Hongjie, Javey, Ali, Guo, Jing, Wang, Qian, Lundstrom, Mark

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Prospects for Nanowire-Doped Polycrystalline Graphene Films for Ultratransparent, Highly Conductive Electrodes von Jeong, Changwook, Nair, Pradeep, Khan, Mohammad, Lundstrom, Mark, Alam, Muhammad A

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Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In2O3 Thin-Film Transistors von Niu, Chang, Lin, Zehao, Askarpour, Vahid, Zhang, Zhuocheng, Tan, Pukun, Si, Mengwei, Shang, Zhongxia, Zhang, Yizhi, Wang, Haiyan, Lundstrom, Mark S., Maassen, Jesse, Ye, Peide D.

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Conductance Asymmetry of Graphene p-n Junction von Low, T., Seokmin Hong, Appenzeller, J., Datta, S., Lundstrom, M.S.

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Performance Comparisons of III-V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm) von Seung Hyun Park, Yang Liu, Kharche, N., Jelodar, Mehdi Salmani, Klimeck, G., Lundstrom, M. S., Luisier, M.

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Role of energy distribution in contacts on thermal transport in Si: A molecular dynamics study von Dunn, Jonathan, Antillon, Edwin, Maassen, Jesse, Lundstrom, Mark, Strachan, Alejandro

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The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells von Moore, James E., Hages, Charles J., Agrawal, Rakesh, Lundstrom, Mark S., Gray, Jeffery L.

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Unification of nonequilibrium molecular dynamics and the mode-resolved phonon Boltzmann equation for thermal transport simulations von Hu, Yue, Feng, Tianli, Gu, Xiaokun, Fan, Zheyong, Wang, Xufeng, Lundstrom, Mark, Shrestha, Som S., Bao, Hua

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