Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD von Lu, Zhengqian, Wang, Yuning, Wang, Luhua, Xu, Yu, Liu, Yuhuai, Xu, Ke

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The first principle calculation of improving p-type characteristics of BxAl1-xN von Lu, Zhengqian, Wang, Fang, Liu, Yuhuai

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Cathodoluminescence studies of point defects in aluminum nitride von Lu, Zhengqian, Wang, Yuning, Wang, Chuang, Wang, Fang, Xu, Ke, Liu, Yuhuai

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Determining topological charge based on an improved Fizeau interferometer von Cui, Shengwei, Xu, Bin, Luo, Saiyu, Xu, Huiying, Cai, Zhiping, Luo, Zhengqian, Pu, Jixiong, Chávez-Cerda, Sabino

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Computer vision for enhanced quantification of FEA of ballistic impact von He, Jie, Yuan, Zishun, Xu, Wang, Pan, Zhinuo, Chen, Xiyi, Xu, Pinghua, Lu, Zhengqian

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Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer von Wang, Yuning, Qu, Yipu, Xu, Yu, Li, Didi, Lu, Zhengqian, Li, Jianjie, Su, Xujun, Wang, Guobin, Shi, Lin, Zeng, Xionghui, Wang, Jianfeng, Cao, Bing, Xu, Ke

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Morphology evolution and cathodoluminescence properties of non-polar aluminum nitride microwires von Wang, Chuang, Gao, Xiaodong, Chen, Jiafan, Wang, Luhua, Zeng, Xionghui, Zheng, Shunan, Li, Chunpeng, Lu, Zhengqian, Dong, Xiaoming, Huang, Jun, Xu, Ke

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The first principle calculation of improving p-type characteristics of B x Al1-x N von Zhengqian Lu, Fang Wang, Yuhuai Liu

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Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD von Niass, Mussaab I., Zang, Junwei, Lu, Zhengqian, Du, Zhongqiu, Chen, Xue, Qu, Yipu, Wang, Fang, Liu, Yuhuai

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Structure optimization of 266 nm Al^sub 0.53^GaN/Al^sub 0.75^GaN SQW DUV-LD von Niass, Mussaab I, Zang, Junwei, Lu, Zhengqian, Du, Zhongqiu, Chen, Xue, Qu, Yipu, Wang, Fang, Liu, Yuhuai

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A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1-xN heterojunction grown on AlN substrate von Niass, Mussaab I., Sharif, Muhammad Nawaz, Wang, Yifu, Lu, Zhengqian, Chen, Xue, Qu, Yipu, Du, Zhongqiu, Wang, Fang, Liu, Yuhuai

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Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals von Niass, Mussaab I., Wang, Fang, Qu, Yi Pu, Liu, Yu Huai, Lu, Zheng Qian, Sharif, Muhammad Nawaz

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A contrivance of 277 nm DUV LD with B 0.313 Ga 0.687 N/B 0.40 Ga 0.60 N QWs and Al x Ga 1–x N heterojunction grown on AlN substrate von Niass, Mussaab I., Sharif, Muhammad Nawaz, Wang, Yifu, Lu, Zhengqian, Chen, Xue, Qu, Yipu, Du, Zhongqiu, Wang, Fang, Liu, Yuhuai

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Ultra-low power consumption long-distance step-counting temperature-measuring cattle ear tag von LU ZHENGQIAN, DAI YONG

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Power cabinet with dustproof connector von DENG HUI, LU ZHENGQIAN

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Ultra-low-power-consumption long-distance low-delay wireless device von LU ZHENGQIAN, DAI YONG

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Distribution box convenient to maintain von DENG HUI, LU ZHENGQIAN

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Radar mounting structure and vehicle von MIN YUANPING, LU ZHENGQIAN, LIAO SUIRONG, PAN JUN

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Vehicle body front wall structure and vehicle with same von LYU FENGYANG, LU ZHENGQIAN, XIE FENG, PAN JUN

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Automobile body rear end force transmission structure and automobile von CHEN WEI, LU ZHENGQIAN, HE YUJUN, XIE FENG, GENG FURONG

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