Improved Air Spacer for Highly Scaled CMOS Technology von Cheng, Kangguo, Park, Chanro, Wu, Heng, Li, Juntao, Nguyen, Son, Zhang, Jingyun, Wang, Miaomiao, Mehta, Sanjay, Liu, Zuoguang, Conti, Richard, Loubet, Nicolas J., Frougier, Julien, Greene, Andrew, Yamashita, Tenko, Haran, Balasubramanian, Divakaruni, Rama

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A water structure indicator suitable for generic contexts: Two-liquid behavior at hydration and nanoconfinement conditions and a molecular approach to hydrophobicity and wetting von Loubet, Nicolás A., Verde, Alejandro R., Appignanesi, Gustavo A.

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Turning an energy-based defect detector into a multi-molecule structural indicator for water von Loubet, Nicolás A., Verde, Alejandro R., Lockhart, Jano A., Appignanesi, Gustavo A.

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A structural determinant of the behavior of water at hydration and nanoconfinement conditions von Loubet, Nicolás A., Verde, Alejandro R., Appignanesi, Gustavo A.

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Water at the nanoscale: From filling or dewetting hydrophobic pores and carbon nanotubes to “sliding” on graphene von Accordino, Sebastián R., Alarcón, Laureano M., Loubet, Nicolás A., Appignanesi, Gustavo A.

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BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material von Jamison, Paul C., Massey, John, Ando, Takashi, Cartier, Eduard A., Jagannathan, Hemanth, Chen, P. J., Liu, Eric, Romero, Alex, Naczas, Sebastian, Narayanan, Vijay, Pancharatnam, Shanti, Restle, Phillip, Rubin, Joshua, Loubet, Nicolas J, Choi, Kisik

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Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length von Khakifirooz, A., Kangguo Cheng, Reznicek, A., Adam, T., Loubet, N., Hong He, Kuss, J., Juntao Li, Kulkarni, P., Ponoth, S., Sreenivasan, R., Qing Liu, Doris, B., Shahidi, G.

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Role of hydrogen-bond coordination defects in the structural relaxation of supercooled water von Loubet, Nicolás A., Verde, Alejandro R., Accordino, Sebastián R., Alarcón, Laureano M., Appignanesi, Gustavo A.

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0.13 \mu m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications von Avenier, G., Diop, M., Chevalier, P., Troillard, G., Loubet, N., Bouvier, J., Depoyan, L., Derrier, N., Buczko, M., Leyris, C., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Revil, N., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

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Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors von Durfee, Curtis, Otto IV, Ivo, Kal, Subhadeep, Pancharatnam, Shanti, Flaugh, Matthew, Kanaki, Toshiki, Rednor, Matthew, Zhou, Huimei, Qin, Liqiao, Meli, Luciana, Loubet, Nicolas, Biolsi, Peter, Felix, Nelson

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Mécanismes de gravure et de sélectivité de matériaux à base de silicium en plasma délocalisé NF3/NH3(ou H2), pour le développement de procédés plasmas sélectif von Loubet, Nicolas

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Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices von LOUBET, Nicolas, ADAM, Thomas, DORIS, Bruce, SAMPSON, Ron, RAYMOND, Mark, QING LIU, KANGGUO CHENG, SREENIVASAN, Raghavasimhan, REZNICEK, Alexander, KHARE, Prasanna, KLEEMEIER, Walter, PARUCHURI, Vamsi

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Mapping of the mechanical response in Si/SiGe nanosheet device geometries von Murray, Conal E., Yan, Hanfei, Lavoie, Christian, Jordan-Sweet, Jean, Pattammattel, Ajith, Reuter, Kathleen, Hasanuzzaman, Mohammad, Lanzillo, Nicholas, Robison, Robert, Loubet, Nicolas

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Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors von Durfee, Curtis, Kal, Subhadeep, Pancharatnam, Shanti, Bhuiyan, Maruf, Otto IV, Ivo, Flaugh, Matthew, Smith, Jeffrey, Chanemougame, Daniel, Alix, Cheryl, Zhou, Huimei, Frougier, Julien, Greene, Andrew, Belyansky, Michael, Watanabe, Koji, Zhang, Jingyun, Schmidt, Daniel, Breton, Mary, Zhao, Kai, Wang, Miaomiao, Basker, Veeraraghavan, Mosden, Aelan, Loubet, Nicolas, Guo, Dechao, Biolsi, Peter, Haran, Bala, Bu, Huiming

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Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films von Adam, Thomas, Loubet, Nicolas, Reznicek, Alexander, Paruchuri, Vamsi, Sampson, Ron, Sadana, Devendra

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Forming gate last vertical FET with self-aligned spacers and junctions von Loubet, Nicolas

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(Invited) "Small Size" Effects in Si-Based Epitaxies for Advanced CMOS Technologies von Dutartre, Didier, Seiss, Birgit, Barge, David, Loubet, Nicolas

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A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology von Morin, Pierre, Maitrejean, Sylvain, Allibert, Frederic, Augendre, Emmanuel, Liu, Qing, Loubet, Nicolas, Grenouillet, Laurent, Pofelski, Alexandre, Chen, Kangguo, Khakifirooz, Ali, Wacquez, Romain, Reboh, Shay, Bonnevialle, Aurore, le Royer, Cyrille, Morand, Yves, Kanyandekwe, Joel, Chanemougamme, Daniel, Mignot, Yann, Escarabajal, Yann, Lherron, Benoit, Chafik, Fadoua, Pilorget, Sonia, Caubet, Pierre, Vinet, Maud, Clement, Laurent, Desalvo, Barbara, Doris, Bruce, Kleemeier, Walter

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Selective etching of Si1-xGex versus Si with gaseous HCl for the formation of advanced CMOS devices von LOUBET, Nicolas, KORMANN, Thomas, CHABANNE, Guillaume, DENORME, Stéphane, DUTARTRE, Didier

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Forming Gate Last Vertical FET With Self-Aligned Spacers and Junctions von Loubet, Nicolas

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