Research on Buoy Power Management Technology Based on the Battery Switch Theory von Lou, Xin Nan, Zou, Guo Liang

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Ocean network security risk assessment system and method von WANG JIN, ZHENG ZONGSHENG, TU ZHENGFEI, HAN JIEAI, ZOU GUOLIANG, LOU XINNAN, MA JINGJING, HAN JINJU, JING YUEYING, YE JIANCHENG, GONG SHENGHAO

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A Junctionless Nanowire Transistor With a Dual-Material Gate von Haijun Lou, Lining Zhang, Yunxi Zhu, Xinnan Lin, Shengqi Yang, Jin He, Mansun Chan

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A multicolor-tunable fluorescent hydrogel for information encryption von Dai, Ao, Lou, Kang, Wang, Xinnan, Huang, Honghao, Zhou, Qi

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A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs von Xiao, Ying, Zhang, Baili, Lou, Haijun, Zhang, Lining, Lin, Xinnan

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Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap von Xu, Peng, Lou, Haijun, Zhang, Lining, Yu, Zhonghua, Lin, Xinnan

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A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect von Xiao, Ying, Lin, Xinnan, Lou, Haijun, Zhang, Baili, Zhang, Lining, Chan, Mansun

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Investigation of trench process variation on the recessed-gate junctionless MOSFETs considering the circuit application von Li, Wentao, Lou, Haijun, Lin, Xinnan

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High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime von Yang, Yumei, Lou, Haijun, Lin, Xinnan

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The study of bending properties of monolayer MoS in non-collinear electrodes using first principles theory von Wu, Gengshu, Lou, Haijun, Liu, Kai, Lin, Xinnan

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The study of bending properties of monolayer MoS 2 in non-collinear electrodes using first principles theory von Wu, Gengshu, Lou, Haijun, Liu, Kai, Lin, Xinnan

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Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect von Wan, Wenbo, Lou, Haijun, Xiao, Ying, Lin, Xinnan

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The study of bending properties of monolayer MoS2 in non-collinear electrodes using first principles theory von Wu, Gengshu, Lou, Haijun, Liu, Kai, Lin, Xinnan

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Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs von Lin, Xinnan, Zhang, Baili, Xiao, Ying, Lou, Haijun, Zhang, Lining, Chan, Mansun

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The Study and Modeling of saturation drain voltage for junctionless FinFET von Lou, Haijun, Lei, Qianjin, Yang, Yumei, Lin, Xinnan

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Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure von Hu, Luodan, Lou, Haijun, Li, Wentao, Chang, Kuan-Chang, Lin, Xinnan

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Insulating Property Improvement of Polyimide in Devices by Low‐Temperature Supercritical Fluids von Li, Lei, Chang, Kuan‐Chang, Lin, Xinnan, Zhang, Rui, Lou, Jyun‐Hao

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Suppression of tunneling leakage current in junctionless nanowire transistors von Lou, Haijun, Li, Dan, Dong, Yan, Lin, Xinnan, He, Jin, Yang, Shengqi, Chan, Mansun

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Suppression of subthreshold characteristics variation for junctionless multigate transistors using high-k spacers von Lou, Haijun, Zhang, Baili, Li, Dan, Lin, Xinnan, He, Jin, Chan, Mansun

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Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors von Lou, Haijun, Li, Dan, Dong, Yan, Lin, Xinnan, Yang, Shengqi, He, Jin, Chan, Mansun

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