Ex situ Ohmic contacts to n -InGaAs von Baraskar, Ashish, Wistey, Mark A., Jain, Vibhor, Lobisser, Evan, Singisetti, Uttam, Burek, Greg, Lee, Yong Ju, Thibeault, Brian, Gossard, Arthur, Rodwell, Mark

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1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance von Jain, V., Rode, J. C., Han-Wei Chiang, Baraskar, A., Lobisser, E., Thibeault, B. J., Rodwell, M., Urteaga, M., Loubychev, D., Snyder, A., Wu, Y., Fastenau, J. M., Liu, W. K.

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox von Jain, V, Lobisser, E, Baraskar, A, Thibeault, B J, Rodwell, M J W, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz von JAIN, Vibhor, LOBISSER, Evan, FASTENAU, J. M, LIU, W. K, BARASKAR, Ashish, THIBEAULT, Brian J, RODWELL, Mark J. W, GRIFFITH, Z, URTEAGA, M, LOUBYCHEV, D, SNYDER, A, WU, Y

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous [Formula Omitted] von Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J, Rodwell, Mark J. W, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J. M, Liu, W. K

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f tau / f max similar to hbox 430 / 800 Unknown character hbox GHz von Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J, Rodwell, Mark JW, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K

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InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced C cb and increased RF cut‐off frequency von Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han‐Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.

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InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced C sub(c)band increased RF cut-off frequency von Lobisser, Evan, Rode, Johann C, Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J, Thibeault, Brian J, Rodwell, Mark JW, Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M, Liu, Amy WK

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InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency von Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.

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200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz von Lobisser, E., Griffith, Z., Jain, V., Thibeault, B.J., Rodwell, M.J.W., Loubychev, D., Snyder, A., Ying Wu, Fastenau, J.M., Liu, A.W.K.

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Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs von Jain, V., Baraskar, A.K., Wistey, M.A., Singisetti, U., Griffith, Z., Lobisser, E., Thibeault, B.J., Gossard, A.C., Rodwell, M.

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High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology von Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J, Rodwell, Mark, Griffith, Z, Urteaga, M, Bartsch, S T, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K

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