Semiconductor Nanomaterials for Optoelectronic Applications von Lo, Ikai

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Advances in GaN Crystals and Their Applications von Lo, Ikai

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Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor von Tsai, Chih-Tsung, Chang, Ting-Chang, Chen, Shih-Ching, Lo, Ikai, Tsao, Shu-Wei, Hung, Ming-Chin, Chang, Jiun-Jye, Wu, Chen-Yi, Huang, Chun-Yao

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Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory von Po-Hsun Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Tian-Jian Chu, Min-Chen Chen, Hui-Chun Huang, Ikai Lo, Jin-Cheng Zheng, Sze, Simon M.

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Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory von Tsung-Ming Tsai, Kuan-Chang Chang, Ting-Chang Chang, Rui Zhang, Tong Wang, Chih-Hung Pan, Kai-Huang Chen, Hua-Mao Chen, Min-Chen Chen, Yi-Ting Tseng, Po-Hsun Chen, Ikai Lo, Jin-Cheng Zheng, Jen-Chung Lou, Sze, Simon M.

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Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy von Shih, Huei-Jyun, Lo, Ikai, Wang, Ying-Chieh, Tsai, Cheng-Da, Lin, Yu-Chung, Lu, Yi-Ying, Huang, Hui-Chun

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Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy von Wang, Ying-Chieh, Lo, Ikai, Lin, Yu-Chung, Tsai, Cheng-Da, Chang, Ting-Chang

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Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory von Po-Hsun Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Chih-Yang Lin, Fu-Yuan Jin, Min-Chen Chen, Hui-Chun Huang, Ming-Hui Wang, Ikai Lo, Jin-Cheng Zheng, Sze, Simon M.

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Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate von Tsai, Cheng-Da, Lo, Ikai, Wang, Ying-Chieh, Yang, Chen-Chi, You, Shuo-Ting, Yang, Hong-Yi, Huang, Hui-Chun, Chou, Mitch M. C.

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Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs von Lin, Yu-Chung, Lo, Ikai, Tsai, Cheng-Da, Wang, Ying-Chieh, Huang, Hui-Chun, Li, Chu-An, Chou, Mitch M. C., Chang, Ting-Chang

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Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory von Po-Hsun Chen, Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Chih-Cheng Shih, Cheng-Hsien Wu, Cheng-Chi Yang, Yu-Ting Su, Chih-Yang Lin, Yi-Ting Tseng, Min-Chen Chen, Ruey-Chi Wang, Ching-Chich Leu, Kai-Huang Chen, Ikai Lo, Jin-Cheng Zheng, Sze, Simon M.

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Growth of InN hexagonal microdisks von Yang, Chen-Chi, Lo, Ikai, Hu, Chia-Hsuan, Huang, Hui-Chun, Chou, Mitch M. C.

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Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory von Po-Hsun Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Yu-Ting Su, Cheng-Hsien Wu, Wan-Ching Su, Chih-Cheng Yang, Min-Chen Chen, Chun-Hao Tu, Kai-Huang Chen, Ikai Lo, Jin-Cheng Zheng, Sze, Simon M.

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Green light emission by InGaN/GaN multiple-quantum-well microdisks von Hsu, Yu-Chi, Lo, Ikai, Shih, Cheng-Hung, Pang, Wen-Yuan, Hu, Chia-Hsuan, Wang, Ying-Chieh, Tsai, Cheng-Da, Chou, Mitch M. C., Hsu, Gary Z. L.

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Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory von Su, Yu-Ting, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Chen, Hsin-Lu, Chen, Min-Chen, Yang, Chih-Cheng, Huang, Hui-Chun, Lo, Ikai, Zheng, Jin-Cheng, Sze, Simon M.

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Effects of erbium doping of indium tin oxide electrode in resistive random access memory von Chen, Po-Hsun, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Pan, Chih-Hung, Lin, Chih-Yang, Jin, Fu-Yuan, Chen, Min-Chen, Huang, Hui-Chun, Lo, Ikai, Zheng, Jin-Cheng, Sze, Simon M.

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Anisotropic Strain on GaN Microdisks Grown by Plasma-Assisted Molecular Beam Epitaxy von Yang, Hong-Yi, Lo, Ikai, Tsai, Cheng-Da, Wang, Ying-Chieh, Shih, Huei-Jyun, Huang, Hui-Chun, Chou, Mitch M. C., Huang, Louie, Wang, Terence, Kuo, Ching T. C.

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InGaN/GaN single-quantum-well microdisks von Hsu, Yu-Chi, Lo, Ikai, Shih, Cheng-Hung, Pang, Wen-Yuan, Hu, Chia-Hsuan, Wang, Ying-Chieh, Chou, Mitch M. C.

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Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy von Tsai, ChengDa, Lo, Ikai, Wang, YingChieh, Yang, ChenChi, Yang, HongYi, Shih, HueiJyun, Huang, HuiChun, Chou, Mitch, Huang, Louie, Tseng, Binson

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Complementary resistive switching behavior for conductive bridge random access memory von Zheng, Hao-Xuan, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Shih, Chih-Cheng, Zhang, Rui, Chen, Kai-Huang, Wang, Ming-Hui, Zheng, Jin-Cheng, Lo, Ikai, Wu, Cheng-Hsien, Tseng, Yi-Ting, Sze, Simon M.

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