Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements von Camarda, Massimo, Privitera, Stefania, La Via, Francesco, Piluso, Nicolo, Litrico, Grazia

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Protrusions reduction in 3C-SiC thin film on Si von Zimbone, Massimo, Mauceri, Marco, Litrico, Grazia, Barbagiovanni, Eric Gasparo, Bongiorno, Corrado, La Via, Francesco

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Controlled large-scale fabrication of sea sponge-like ZnO nanoarchitectures on textured silicon von Fragalà, Maria Elena, Mauro, Alessandro Di, Litrico, Grazia, Grassia, Filippo, Malandrino, Graziella, Foti, Gaetano

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Strong Raman yield enhancement in large Si nanocrystals from ultraviolet to infrared: Density and shape dependence von Faraci, Giuseppe, Italia, Markus, Ruggeri, Rosa, Litrico, Grazia, Mannino, Giovanni

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High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111) von Bongiorno, Corrado, La Via, Francesco, Litrico, Grazia, Anzalone, Ruggero, Severino, Andrea, Locke, Christopher, Saddow, Stephen E.

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Defects in High Energy Ion Irradiated 4H-SiC von Izzo, Gaetano, Severino, Andrea, La Via, Francesco, Foti, Gaetano, Litrico, Grazia, Calcagno, Lucia

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SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications von Tudisco, Salvatore, La Via, Francesco, Agodi, Clementina, Altana, Carmen, Borghi, Giacomo, Boscardin, Maurizio, Bussolino, Giancarlo, Calcagno, Lucia, Camarda, Massimo, Cappuzzello, Francesco, Carbone, Diana, Cascino, Salvatore, Casini, Giovanni, Cavallaro, Manuela, Ciampi, Caterina, Cirrone, Giuseppe, Cuttone, Giacomo, Fazzi, Alberto, Giove, Dario, Gorini, Giuseppe, Labate, Luca, Lanzalone, Gaetano, Litrico, Grazia, Longo, Giuseppe, Lo Presti, Domenico, Mauceri, Marco, Modica, Roberto, Moschetti, Maurizio, Muoio, Annamaria, Musumeci, Franco, Pasquali, Gabriele, Petringa, Giada, Piluso, Nicolò, Poggi, Giacomo, Privitera, Stefania, Puglia, Sebastiana, Puglisi, Valeria, Rebai, Marica, Ronchin, Sabina, Santangelo, Antonello, Stefanini, Andrea, Trifirò, Antonio, Zimbone, Massimo

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Formation, Morphology, and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC von Milazzo, Rachela G, Privitera, Stefania, Litrico, Grazia, Scalese, Silvia, Mirabella, Salvatore, La Via, Francesco, Lombardo, Salvatore, Rimini, Emanuele

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Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis von Litrico, Grazia, Piluso, Nicolò, La Via, Francesco

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Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements von Privitera, Stefania M. S., Litrico, Grazia, Camarda, Massimo, Piluso, Nicolò, La Via, Francesco

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Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate von Litrico, Grazia, Piluso, Nicolo, Lorenti, Simona, Coffa, Salvo, La Via, Francesco, Anzalone, Ruggero, Arena, Giuseppe

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Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films von Bongiorno, Corrado, Litrico, Grazia, Nicotra, Giuseppe, Zimbone, Massimo, Mauceri, Marco, Coffa, Salvo, Anzalone, Ruggero, Alberti, Alessandra, La Via, Francesco

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Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates von La Via, Francesco, Künecke, Ulrike, Monnoye, Sylvain, Zielinski, Marcin, Wellmann, Peter J., Schuh, Philipp, Mauceri, Marco, Litrico, Grazia

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High Resolution Investigation of Stacking Fault Density by HRXRD and STEM von Bongiorno, Corrado, Smecca, Emanuele, Zimbone, Massimo, La Magna, Antonino, Alberti, Alessandra, Anzalone, Ruggero, Barbagiovanni, Eric G., Mauceri, Marco, La Via, Francesco, Litrico, Grazia

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3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers von Schuh, P., Litrico, G., La Via, F., Mauceri, M., Wellmann, P.J.

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Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET von Litrico, Grazia, Zimbone, Massimo, di Stefano, Maria Ausilia, Piluso, Nicolo, Lorenti, Simona, Reitano, Riccardo, Canino, Mariaconcetta, La Via, Francesco, Nipoti, Roberta

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Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates von Syväjärvi, Mikael, Schuh, Philipp, Wellmann, Peter J., Hirsch, Andreas, Mauceri, Marco, La Via, Francesco, Litrico, Grazia, Vecera, Philipp

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4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106 von Puglisi, Marco, Camarda, Massimo, La Via, Francesco, Vecchio, Carmelo, Mauceri, Marco, Litrico, Grazia, Pecora, Antonino, Crippa, Danilo, Piluso, Nicolo’

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Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films von Mauceri, Marco, Anzalone, Ruggero, Canino, Andrea, Fiorenza, Patrick, Crippa, Danilo, Privitera, Stefania, La Magna, Antonino, La Via, Francesco, Camarda, Massimo, Severino, Andrea, Vecchio, Carmelo, Pecora, Antonino, Litrico, Grazia

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Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications von Mauceri, Marco, Privitera, Stefania, Pellegrino, Giovanna, Crippa, Danilo, Piluso, Nicolò, Fiorenza, Patrick, La Magna, Antonino, La Via, Francesco, Alberti, Alessandra, Vecchio, Carmelo, Pecora, Antonino, Litrico, Grazia, Camarda, Massimo, Anzalone, Ruggero

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