Influence from the electronic shell structure on the range distribution during channeling of 40–300 keV ions in 4H-SiC von Linnarsson, M. K., Vines, L., Hallén, A.

Volltext

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC von Linnarsson, M. K., Hallén, A., Vines, L.

Volltext

Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC von Linnarsson, M K, Hallén, A, Vines, L

Volltext

New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector von Linnarsson, M K, Hallén, A, Åström, J, Primetzhofer, D, Legendre, S, Possnert, G

Volltext

Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering von Linnarsson, M K, Hallén, A, Khartsev, S, Suvanam, S S, Usman, M

Volltext

Diffusion of Fe and Na in co-evaporated Cu(In,Ga)Se2 devices on steel substrates von Platzer-Björkman, C., Jani, S., Westlinder, J., Linnarsson, M.K., Scragg, J., Edoff, M.

Volltext

Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS) von Primetzhofer, D., Dentoni Litta, E., Hallén, A., Linnarsson, M.K., Possnert, G.

Volltext

ToF-MEIS stopping measurements in thin SiC films von Linnarsson, M.K., Khartsev, S., Primetzhofer, D., Possnert, G., Hallén, A.

Volltext

Aluminum doping of epitaxial silicon carbide von Forsberg, U, Danielsson, Ö, Henry, A, Linnarsson, M.K, Janzén, E

Volltext

Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC von Laube, M., Schmid, F., Pensl, G., Wagner, G., Linnarsson, M., Maier, M.

Volltext

Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n -type 4H silicon carbide von Alfieri, G., Monakhov, E. V., Svensson, B. G., Linnarsson, M. K.

Volltext

Fluorescent SiC as a new material for white LEDs von Syväjärvi, M, Müller, J, Sun, JW, Grivickas, V, Ou, Y, Jokubavicius, V, Hens, P, Kaisr, M, Ariyawong, K, Gulbinas, K, Liljedahl, R, Linnarsson, M K, Kamiyama, S, Wellmann, P, Spiecker, E, Ou, H

Volltext

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire von AGGERSTAM, T, PINOS, A, MARCINKEVICIUS, S, LINNARSSON, M, LOURDUDOSS, S

Volltext

Damage recovery in ZnO by post-implantation annealing von Audren, A., Hallén, A., Linnarsson, M.K., Possnert, G.

Volltext

Nitrogen doping of epitaxial silicon carbide von Forsberg, U, Danielsson, Ö, Henry, A, Linnarsson, M.K, Janzén, E

Volltext

Annealing effects on structural and magnetic properties of Co implanted ZnO single crystals von Wikberg, J. M., Knut, R., Audren, A., Ottosson, M., Linnarsson, M. K., Karis, O., Hallén, A., Svedlindh, P.

Volltext

Electrical and structural characterization of ion implanted GaN von Usman, M., Nazir, A., Aggerstam, T., Linnarsson, M.K., Hallén, A.

Volltext

Intentional and unintentional channeling during implantation of 51 V ions into 4H-SiC von Linnarsson, M K, Hallén, A, Vines, L

Volltext

Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers von Gulbinas, K, Ščajev, P, Bikbajavas, V, Grivickas, V, Korolik, O V, Mazanik, A V, Fedotov, A K, Jokubavičius, V, Linnarsson, M K, Syväjärvi, M, Kamiyama, S

Volltext

Ion implantation of silicon carbide von Hallén, A, Janson, M.S, Kuznetsov, A.Yu, Åberg, D, Linnarsson, M.K, Svensson, B.G, Persson, P.O, Carlsson, F.H.C, Storasta, L, Bergman, J.P, Sridhara, S.G, Zhang, Y

Volltext