Complementary resistive switches for passive nanocrossbar memories von Waser, Rainer, Linn, Eike, Rosezin, Roland, Kügeler, Carsten

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Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic von Kim, Wonjoo, Chattopadhyay, Anupam, Siemon, Anne, Linn, Eike, Waser, Rainer, Rana, Vikas

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Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches von van den Hurk, Jan, Linn, Eike, Zhang, Hehe, Waser, Rainer, Valov, Ilia

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Nanobattery Effect in RRAMs-Implications on Device Stability and Endurance von Tappertzhofen, Stefan, Linn, Eike, Bottger, Ulrich, Waser, Rainer, Valov, Ilia

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An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing von Kavehei, Omid, Linn, Eike, Nielen, Lutz, Tappertzhofen, Stefan, Skafidas, Efstratios, Valov, Ilia, Waser, Rainer

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Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM von Kügeler, Carsten, Rosezin, Roland, Linn, Eike, Bruchhaus, Rainer, Waser, Rainer

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Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells von Tappertzhofen, Stefan, Linn, Eike, Menzel, Stephan, Kenyon, Anthony J., Waser, Rainer, Valov, Ilia

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A HfO2‐Based Complementary Switching Crossbar Adder von Breuer, Thomas, Siemon, Anne, Linn, Eike, Menzel, Stephan, Waser, Rainer, Rana, Vikas

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Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices von Linn, Eike, Siemon, Anne, Waser, Rainer, Menzel, Stephan

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A Complementary Resistive Switch-Based Crossbar Array Adder von Siemon, Anne, Menzel, Stephan, Waser, Rainer, Linn, Eike

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Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices von Siemon, Anne, Breuer, Thomas, Aslam, Nabeel, Ferch, Sebastian, Kim, Wonjoo, van den Hurk, Jan, Rana, Vikas, Hoffmann-Eifert, Susanne, Waser, Rainer, Menzel, Stephan, Linn, Eike

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Sklansky tree adder realization in 1S1R resistive switching memory architecture von Siemon, Anne, Menzel, Stephan, Bhattacharjee, Debjyoti, Waser, Rainer, Chattopadhyay, Anupam, Linn, Eike

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Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices von Breuer, Thomas, Nielen, Lutz, Roesgen, Bernd, Waser, Rainer, Rana, Vikas, Linn, Eike

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Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches von Breuer, Thomas, Siemon, Anne, Linn, Eike, Menzel, Stephan, Waser, Rainer, Rana, Vikas

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Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures von van den Hurk, Jan, Havel, Viktor, Linn, Eike, Waser, Rainer, Valov, Ilia

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Dependence of the SET switching variability on the initial state in HfOx-based ReRAM von La Torre, Camilla, Fleck, Karsten, Starschich, Sergej, Linn, Eike, Waser, Rainer, Menzel, Stephan

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Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays von Bhattacharjee, Debjyoti, Siemon, Anne, Linn, Eike, Menzel, Stephan, Chattopadhyay, Anupam

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Storages Are Not Forever von Cambria, Erik, Chattopadhyay, Anupam, Linn, Eike, Mandal, Bappaditya, White, Bebo

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Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching von Du, Nan, Manjunath, Niveditha, Li, Yuan, Menzel, Stephan, Linn, Eike, Waser, Rainer, You, Tiangui, Bürger, Danilo, Skorupa, Ilona, Walczyk, Damian, Walczyk, Christian, Schmidt, Oliver G., Schmidt, Heidemarie

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Low-current operations in 4F super(2)-compatible Ta sub(2)O sub(5)-based complementary resistive switches von Breuer, Thomas, Siemon, Anne, Linn, Eike, Menzel, Stephan, Waser, Rainer, Rana, Vikas

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