Growth of cubic GaN on 3C–SiC/Si (001) nanostructures von Kemper, R.M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., Maier, H.J., Meertens, D., Tillmann, K., As, D.J., Lindner, J.K.N.

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STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells von Kemper, R. M., Veit, P., Mietze, C., Dempewolf, A., Wecker, T., Bertram, F., Christen, J., Lindner, J. K. N., As, D. J.

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Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar + implanted 3C-SiC (001) von Tschumak, E., Granzner, R., Lindner, J. K. N., Schwierz, F., Lischka, K., Nagasawa, H., Abe, M., As, D. J.

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Synthesis of nanocrystalline low temperature silica polymorphs von Schäf, O., Ghobarkar, H., Garnier, A., Vagner, C., Lindner, J.K.N., Hanss, J., Reller, A.

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Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process von Bürger, M., Lindner, J. K. N., Reuter, D., As, D. J.

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Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates von Kemper, R.M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., Lindner, J.K.N., Lischka, K., As, D.J.

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Marker experiments to determine diffusing species and diffusion path in medical Nitinol alloys von Lutz, J., Lindner, J.K.N., Mändl, S.

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Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si von Häberlen, M., Gerlach, J.W., Murphy, B., Lindner, J.K.N., Stritzker, B.

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Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure von WIEGAND, M.-C, SIEVERS, W, LINDNER, J. K. N, TRÖSTER, Th, SCHWEIZER, S

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Quantitative analysis of thin film compositions using EFTEM combined with RBS and ERDA von Lindner, J.K.N., Häberlen, M., Schwarz, F., Thorwarth, G., Hammerl, C., Assmann, W., Stritzker, B.

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Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films von Schreck, M., Hörmann, F., Roll, H., Lindner, J. K. N., Stritzker, B.

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Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001) von Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., Luysberg, M., As, D. J., Lindner, J. K. N.

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XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices von Lindner, J.K.N., Tsang, W.M., Wong, S.P., Xu, J.B., Wilson, I.H.

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First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon von Zirkelbach, F., Stritzker, B., Nordlund, K., Schmidt, W. G., Rauls, E., Lindner, J. K. N.

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Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001) von Kemper, R. M., Häberlen, M., Schupp, T., Weinl, M., Bürger, M., Ruth, M., Meier, C., Niendorf, T., Maier, H. J., Lischka, K., As, D. J., Lindner, J. K. N.

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Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+ implanted 3C-SiC (001) von Tschumak, Elena, Lindner, J. K. N., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., As, D. J.

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Stability of heteroepitaxial coherent growth modes on nanowire radial surfaces von Riedl, T., Lindner, J. K. N.

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Investigation of the nucleation and growth of SiC nanostructures on Si von Scharmann, F., Maslarski, P., Attenberger, W., Lindner, J.K.N., Stritzker, B., Stauden, Th, Pezoldt, J.

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Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon von Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., Rauls, E.

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Strain-driven InAs island growth on top of GaAs(111) nanopillars von Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., Lindner, J. K. N.

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