STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells von Kemper, R. M., Veit, P., Mietze, C., Dempewolf, A., Wecker, T., Bertram, F., Christen, J., Lindner, J. K. N., As, D. J.

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Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+ implanted 3C-SiC (001) von Tschumak, Elena, Lindner, J. K. N., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., As, D. J.

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Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques von Achtelik, J., Sievers, W., Lindner, J.K.N.

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Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process von Bürger, M., Lindner, J. K. N., Reuter, D., As, D. J.

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High-dose carbon implantations into silicon: fundamental studies for new technological tricks von Lindner, J K N

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Stability of heteroepitaxial coherent growth modes on nanowire radial surfaces von Riedl, T., Lindner, J. K. N.

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Ion beam induced sintering of colloidal polystyrene nano-masks von Kraus, D., Lindner, J.K.N., Stritzker, B.

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Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si von Häberlen, M., Gerlach, J.W., Murphy, B., Lindner, J.K.N., Stritzker, B.

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Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks von Lindner, J.K.N., Seider, C., Fischer, F., Weinl, M., Stritzker, B.

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Quantitative analysis of thin film compositions using EFTEM combined with RBS and ERDA von Lindner, J.K.N., Häberlen, M., Schwarz, F., Thorwarth, G., Hammerl, C., Assmann, W., Stritzker, B.

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Creation of internal point defect drains in silicon by carbon implantation von Häberlen, M., Lindner, J.K.N., Stritzker, B.

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Local composition analysis of SiC microstructures formed by ion projection in silicon using energy filtered TEM in combination with FIB specimen preparation von Lindner, J.K.N., Kubsky, S., Schertel, A.

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Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C–SiC layers in silicon von Lindner, J.K.N., Wenzel, S., Stritzker, B.

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Determination of diffusing species from marker experiments in the system Ni–Ti–O von Schirmer, S., Lindner, J.K.N., Mändl, S.

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Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon von Lindner, J.K.N, Stritzker, B

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Oxygen depth profiling by resonant RBS in NiTi after plasma immersion ion implantation von Mändl, S., Lindner, J.K.N.

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Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon von Stritzker, B., Volz, K., Lindner, J.K.N.

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Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar + implanted 3C-SiC (001) von Tschumak, E., Granzner, R., Lindner, J. K. N., Schwierz, F., Lischka, K., Nagasawa, H., Abe, M., As, D. J.

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SiC precipitates formed in Si by simultaneous dual beam implantation of C + and Si + ions von Kögler, R., Eichhorn, F., Mücklich, A., Reuther, H., Heera, V., Skorupa, W., Lindner, J.K.N.

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Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis von Stritzker, B., Volz, K., Lindner, J.K.N.

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