A model for gate-oxide breakdown in CMOS inverters von Rodriguez, R., Stathis, J.H., Linder, B.P.

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The impact of gate-oxide breakdown on SRAM stability von Rodriguez, R., Stathis, J.H., Linder, B.P., Kowalczyk, S., Chuang, C.T., Joshi, R.V., Northrop, G., Bernstein, K., Bhavnagarwala, A.J., Lombardo, S.

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Breakdown transients in ultrathin gate oxides: transition in the degradation rate von Lombardo, S, Stathis, J H, Linder, B P

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Statistics of progressive breakdown in ultra-thin oxides von Linder, B.P., Stathis, J.H.

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Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks von Narayanan, V., Paruchuri, V.K., Cartier, E., Linder, B.P., Bojarczuk, N., Guha, S., Brown, S.L., Wang, Y., Copel, M., Chen, T.C.

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Effect and model of gate oxide breakdown on CMOS inverters von Rodrı́guez, R, Stathis, J.H, Linder, B.P

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Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics von Linder, B.P., Lombardo, S., Stathis, J.H., Vayshenker, A., Frank, D.J.

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Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks von NARAYANAN, V, MAITRA, K, CARRUTHERS, R, LACEY, D. L, CARTIER, E, LINDER, B. P, PARUCHURI, V. K, GUSEV, E. P, JAMISON, P, FRANK, M. M, STEEN, M. L, LA TULIPE, D, ARNOLD, J

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PBTI under dynamic stress: From a single defect point of view von Zhao, K, Stathis, J H, Linder, B P, Cartier, E, Kerber, A

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Plasma immersion ion implantation with dielectric substrates von Linder, B.P., Cheung, N.W.

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Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons von Srinivasan, P., Linder, B.P., Narayanan, V., Misra, D., Cartier, E.

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Characterization of breakdown in ultrathin oxides by hot carrier emission von Tsang, J. C., Linder, B. P.

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Dielectric breakdown mechanisms in gate oxides von Lombardo, Salvatore, Stathis, James H., Linder, Barry P., Pey, Kin Leong, Palumbo, Felix, Tung, Chih Hang

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Gate oxide breakdown under Current Limited Constant Voltage Stress von Linder, B.P., Stathis, J.H., Wachnik, R.A., Wu, E., Cohen, S.A., Ray, A., Vayshenker, A.

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Plasma immersion ion implantation reactor design considerations for oxide charging von En, W., Under, B.P., Cheung, N.W.

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Reliability of ultra-thin oxides in CMOS circuits von Stathis, J.H., Linder, B.P., Rodrı&#x0301, guez, R., Lombardo, S.

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Circuit implications of gate oxide breakdown von Stathis, J.H., Rodrı&#x0301, guez, R., Linder, B.P.

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Dependence of Post-Breakdown Conduction on Gate Oxide Thickness von Lombardo, S., Stathis, J.H., Linder, B.P.

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Influence and model of gate oxide breakdown on CMOS inverters von Rodrı&#x0301, guez, R., Stathis, J.H., Linder, B.P., Joshi, R.V., Chuang, C.T.

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Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon von Edge, L. F., Vo, T., Paruchuri, V. K., Iijima, R., Bruley, J., Jordan-Sweet, J., Linder, B. P., Kellock, A. J., Tsunoda, T., Shinde, S. R.

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