Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes von Chang, Chih-Yao, Hsu, Chun-Ta, Shen, Yao-Luen, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang

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Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs von Ting-Fu Chang, Tsung-Chieh Hsiao, Chih-Fang Huang, Wei-Hung Kuo, Suh-Fang Lin, Samudra, Ganesh S., Liang, Yung C.

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Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium-Tin-Oxide Gate Electrode von Chang, Chih-Yao, Wang, Chien-Sheng, Wang, Ching-Yao, Shen, Yao-Luen, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang

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Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias von Chang, Chih-Yao, Shen, Yao-Luen, Wang, Ching-Yao, Tang, Shun-Wei, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang

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Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode von Xuan, Rong, Kuo, Wei-Hong, Hu, Chih-Wei, Lin, Suh-Fang, Chen, Jenn-Fang

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Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues von Lin, Suh Fang, Chen, Yung Hsiang, Xuan, Rong, Yen, Cheng Tyng, Lee, Chwan Ying, Hung, Chien Chung, Kuo, Wei Hung, Tsai, Ming Jinn, Ku, Tzu Kun, Lee, Lurng Shehng

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(Invited) Innovative Wide Band Gap Power Devices Achievements in ITRI von Lee, Chwan Ying, Chen, Yung-Hsiang, Lee, Lurng-Shehng, Hung, Chien-Chung, Yen, Cheng-Tyng, Lin, Suh-Fang, Xuan, Rong, Kuo, Wei-Hung, Tsai, Ming-Jinn

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Highly Efficient Fine-Pitch Quantum Dot/Titanium Oxide Nanocomposites for Ultrahigh-Resolution Full-Color Micro-Light Emitting Diode Displays von Liang, Kai-Ling, Kuo, Wei-Hung, Shen, Hui-Tang, Lin, Suh fang, Fang, Yen-Hsiang, Lai, Yu-Ying, Lin, Chien-Chung

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Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted von Chang, Chih-Yao, Shen, Yao-Luen, Tang, Shun-Wei, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Wu, Yuh-Renn, Huang, Chih-Fang

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Fabricating Quantum Dot Color Conversion Layers for Micro-LED-Based Augmented Reality Displays von Lin, Chien-Chung, Liang, Kai-Ling, Chao, Han-Yu, Wu, Chun-I, Lin, Suh fang, Huang, Bo-Ming, Huang, Chun-Wei, Wu, Chung-Chih, Kuo, Wei-Hung, Fang, Yen-Hsiang

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COLOR CONVERSION PANEL AND DISPLAY DEVICE von Liang, Kai-Ling, Lin, Suh-Fang, Shen, Hui-Tang, Kuo, Wei-Hung, Wu, Chun-I

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COLOR CONVERSION PANEL AND DISPLAY DEVICE von LIANG KAI-LING, LIN SUH-FANG, WU CHUN-I, SHEN HUI-TANG, KUO WEI-HUNG

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Color conversion panel and display device von LIN, SUH-FANG, LIANG, KAI-LING, KUO, WEI-HUNG, WU, CHUN-I, SHEN, HUI-TANG

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III-V NITRIDE SEMICONDUCTOR DEVICE von Lin Kun-Fong, Tsai Chia-Lung, Kuo Wei-Hung, Lin Suh-Fang

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Enhancement mode gallium nitride based transistor device having a P type metal oxide layer comprising plurality of extension parts extending into the epitaxial stacked layer von LIN SUH-FANG, XUAN RONG, KUO WEI-HUNG

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ENHANCEMENT MODE GALLIUM NITRIDE BASED TRANSISTOR DEVICE von LIN SUH-FANG, XUAN RONG, KUO WEI-HUNG

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Nitride semiconductor structure von LIN SUH-FANG, GUO YIH-DER, KUO WEI-HUNG

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Nitride semiconductor structure von Guo, Yih-Der, Lin, Suh-Fang, Kuo, Wei-Hung

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Light emitting device and method of fabricating a light emitting device von LIN SUH-FANG, XUAN RONG, FU YI-KENG, KUO WEI-HUNG

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Enhancement mode gallium nitride heterostructure field transistor device and method for fabricating the same von KUO, WEI HUNG, LIN, SUH FANG, XUAN, RONG

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