High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers von Lichtenwalner, Daniel J., Cheng, Lin, Dhar, Sarit, Agarwal, Anant, Palmour, John W.

Volltext

Structure and chemistry of passivated SiC/SiO2 interfaces von Houston Dycus, J., Xu, Weizong, Lichtenwalner, Daniel J., Hull, Brett, Palmour, John W., LeBeau, James M.

Volltext

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices von Mackenzie, Andrew, Allen, Scott, Hull, Brett, Palmour, John W., Lichtenwalner, Daniel J., Gajewski, Donald A., Leonard, Robert, Sabri, Shadi, van Brunt, Edward, Burk, Albert

Volltext

Flexible thin film temperature and strain sensor array utilizing a novel sensing concept von Lichtenwalner, Daniel J., Hydrick, Aaron E., Kingon, Angus I.

Volltext

Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC von Das, Suman, Lichtenwalner, Daniel J., Dixit, Hemant, Rogers, Steven, Scholze, Andreas, Ryu, Sei-Hyung

Volltext

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor von Ryu, S., Lichtenwalner, D., Van Brunt, E., Capell, C., O'Loughlin, M., Jonas, C., Lemma, Y., Zhang, J., Richmond, J., Burk, A., Hull, B., O'Brien, H., Ogunniyi, A., Lelis, A., Casady, J., Grider, D., Allen, S., Palmour, J.

Volltext

Improvements to the Analytical Model to Describe UIS Events von Steinmann, Philipp, Ganguly, Satyaki, Hull, Brett, Lam, Khiem, Lichtenwalner, Daniel J., Park, Jae-Hyung, Potera, Rahul, Richmond, Jim, Ryu, Sei-Hyung, Sabri, Shadi, Van Brackle, Charles, Van Brunt, Edward, Williams, Elizabeth

Volltext

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC von Suri, Rahul, Kirkpatrick, Casey J., Lichtenwalner, Daniel J., Misra, Veena

Volltext

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates von Suri, Rahul, Lichtenwalner, Daniel J., Misra, Veena

Volltext

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs von Misra, Veena, Lichtenwalner, Daniel J., Haney, Sarah Kay, Agarwal, Anant K.

Volltext

650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout von Ganguly, Satyaki, Palmour, John W., Ryu, Sei Hyung, Lichtenwalner, Daniel J., Fetzer, Brian, Hull, Brett, Allen, Scott, Woods, Callie, Gajewski, Donald A.

Volltext

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation von Allen, Scott, Hull, Brett, Lichtenwalner, Daniel J., Palmour, John W., Pala, Vipindas

Volltext

Comparison of Au and Au-Ni Alloys as Contact Materials for MEMS Switches von Zhenyin Yang, Lichtenwalner, D.J., Morris, A.S., Krim, J., Kingon, A.I.

Volltext

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers von Ganguly, Satyaki, Palmour, John W., Sabri, Shadi, van Brunt, Edward, Gajewski, Donald A., Allen, Scott, Hull, Brett, Lichtenwalner, Daniel J.

Volltext

15 kV n-GTOs in 4H-SiC von Allen, Scott, Hull, Brett, Richmond, Jim, O'Brien, Heather, Jonas, Charlotte, Ryu, Sei Hyung, Burk, Albert A., Casady, Jeff, Grider, David, Capell, Craig, Lemma, Yemane, Palmour, John W., McCain, Matthew, O’Loughlin, Michael, Sabri, Shadi, van Brunt, Edward, Ogunniyi, Aderinto, Lelis, Aivars J., Lichtenwalner, Daniel J.

Volltext

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout von Allen, Scott, Hull, Brett, Grider, David, Palmour, John W., Akturk, Akin, Richmond, Jim, Lichtenwalner, Daniel J., Barbieri, Thomas, McGarrity, James

Volltext

High-Mobility SiC MOSFETs with Chemically Modified Interfaces von Cheng, Lin, Allen, Scott, Dhar, Sarit, Lichtenwalner, Daniel J., Agarwal, Anant K., Palmour, John W.

Volltext

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions von Park, Jae Hyung, Ganguly, Satyaki, Allen, Scott, Hull, Brett, Richmond, Jim, Palmour, John W., Steinmann, Philipp, Ryu, Sei Hyung, Romero, Amy, Sabri, Shadi, van Brunt, Edward, Gajewski, Donald A., Lichtenwalner, Daniel J.

Volltext

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs von Raman, Ashok, Galloway, Kenneth F., Schrimpf, Ronald D., Reed, Robert A., Arslanbekov, Robert, Johnson, Robert A., Lauenstein, Jean-Marie, Ball, Dennis R., Sternberg, Andrew L., Alles, Michael L., Grider, David, Witulski, Arthur F., Hutson, John M., Javanainen, Arto, Lichtenwalner, Daniel J.

Volltext

Electrical properties and interface structure of SiC MOSFETs with barium interface passivation von Lichtenwalner, D. J., Dycus, J. Houston, Weizong Xu, Lebeau, James M., Hull, B., Allen, S., Palmour, J. W.

Volltext