Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures von Simon, John, Protasenko, Vladimir, Lian, Chuanxin, Xing, Huili, Jena, Debdeep

Volltext

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance von Ronghua Wang, Saunier, P, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Snider, G, Fay, P, Jena, D, Huili Xing

Volltext

Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene von Huang, Libai, Hartland, Gregory V, Chu, Li-Qiang, Luxmi, Feenstra, Randall M, Lian, Chuanxin, Tahy, Kristof, Xing, Huili

Volltext

Polarization-engineering in group III-nitride heterostructures: New opportunities for device design von Jena, Debdeep, Simon, John, Wang, Albert (Kejia), Cao, Yu, Goodman, Kevin, Verma, Jai, Ganguly, Satyaki, Li, Guowang, Karda, Kamal, Protasenko, Vladimir, Lian, Chuanxin, Kosel, Thomas, Fay, Patrick, Xing, Huili

Volltext

Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors von Joglekar, Sameer, Chuanxin Lian, Baskaran, Rajesh, Yan Zhang, Palacios, Tomas, Hanson, Allen

Volltext

Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work-Function Engineering von GUOWANG LI, ZIMMERMANN, Tom, YU CAO, CHUANXIN LIAN, XIU XING, RONGHUA WANG, FAY, Patrick, XING, Huili Grace, JENA, Debdeep

Volltext

Electrical transport properties of wafer-fused p -GaAs / n -GaN heterojunctions von Lian, Chuanxin, Xing, Huili Grace, Chang, Yu-Chia, Fichtenbaum, Nick

Volltext

Conduction band offset at the InN∕GaN heterojunction von Wang, Kejia (Albert), Lian, Chuanxin, Su, Ning, Jena, Debdeep, Timler, John

Volltext

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy von Guo, Jia, Cao, Yu, Lian, Chuanxin, Zimmermann, Tom, Li, Guowang, Verma, Jai, Gao, Xiang, Guo, Shiping, Saunier, Paul, Wistey, Mark, Jena, Debdeep, Xing, Huili (Grace)

Volltext

Design of highly selective balanced bandpass filter with wide differential-mode stopband and high common-mode suppression von Fu, Shiqiang, Lian, Chuanxin, Xu, Zhixia, Wang, Zhongbao

Volltext

Threshold Voltage Control in \hbox \hbox\hbox HEMTs by Work-Function Engineering von Guowang Li, Zimmermann, T, Yu Cao, Chuanxin Lian, Xiu Xing, Ronghua Wang, Fay, P, Xing, H G, Jena, D

Volltext

DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion von Chuanxin Lian, Huili Xing, Wang, C.S., McCarthy, L., Brown, D.

Volltext

Quantum transport in graphene nanoribbons patterned by metal masks von Lian, Chuanxin, Tahy, Kristof, Fang, Tian, Li, Guowang, Xing, Huili Grace, Jena, Debdeep

Volltext

The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs von Lian, Chuanxin, Xing, Huili Grace

Volltext

Gain degradation mechanisms in wafer fused AlGaAs∕GaAs∕GaN heterojunction bipolar transistors von Lian, Chuanxin, Xing, Huili Grace, Wang, Chad S., Brown, David, McCarthy, Lee

Volltext

Threshold Voltage Control in [Formula Omitted] HEMTs by Work-Function Engineering von Li, Guowang, Zimmermann, Tom, Cao, Yu, Lian, Chuanxin, Xing, Xiu, Wang, Ronghua, Fay, Patrick, Xing, Huili Grace, Jena, Debdeep

Volltext

Threshold Voltage Control in hbox Al 0.72 hbox Ga 0.28 hbox N / AlN / GaN HEMTs by Work-Function Engineering von Li, Guowang, Zimmermann, Tom, Cao, Yu, Lian, Chuanxin, Xing, Xiu, Wang, Ronghua, Fay, Patrick, Xing, Huili Grace, Jena, Debdeep

Volltext

Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy von Lian, Chuanxin, Xing, Huili (Grace)

Volltext

Gate-Recessed Enhancement-Mode InAIN/AIN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance von RONGHUA WANG, SAUNIER, Paul, XIU XING, CHUANXIN LIAN, XIANG GAO, SHIPING GUO, SNIDER, Gregory, FAY, Patrick, JENA, Debdeep, HUILI XING

Volltext

Conduction band offset at the In N ∕ Ga N heterojunction von Wang, Kejia (Albert), Lian, Chuanxin, Su, Ning, Jena, Debdeep, Timler, John

Volltext