Method for detecting and quantifying looseness abnormity of steel coil binding belt based on active vision imaging von WANG QIYAN, YE CHUAN, LI WENYU, LI TAOFEI, FAN ZIXUAN, XIE YOUCHUN, CHEN JIAN, HU YUANYAO

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Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor von Li, Xiaobo, Pu, Taofei, Li, Xianjie, Li, Liuan, Ao, Jin-Ping

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Slope-assisted BOTDA based on vector SBS and frequency-agile technique for wide-strain-range dynamic measurements von Zhou, Dengwang, Dong, Yongkang, Wang, Benzhang, Jiang, Taofei, Ba, Dexin, Xu, Pengbai, Zhang, Hongying, Lu, Zhiwei, Li, Hui

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Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure von Li, Xiaobo, Pu, Taofei, Li, Liuan, Ao, Jin-Ping

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Many adjusting position 's horse -vaulting trainer von HUO YU, LI TAOFEI, CHU YIFEI, WANG JUDONG, GUO HONGYUN

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p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application von Li, Xiaobo, Pu, Taofei, Zhang, Tong, Li, Xianjie, Li, Liuan, Ao, Jin-Ping

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Forward Brillouin Scattering for Bubble and Flow Interruption Detection Toward Microscale Liquid Systems von Li, Tianfu, Li, Hongwei, Chen, Chao, Ren, Yuli, Jiang, Taofei, Qiu, Liqiang, Ba, Dexin, Dong, Yongkang

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Test and Analysis on Extended Temperature Rise of 110 kV Transformer Based on Distributed Temperature Sensing von Li, Huan, Liu, Yunpeng, Zhuang, Xinyu, Xiao, Hai, Fan, Xiaozhou, Wang, Jiaxue, Li, Xinye, Jiang, Taofei

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Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current von Du, Jiyao, Pu, Taofei, Li, Xiaobo, Li, Liuan, Ao, Jin-Ping, Gao, Hongwei

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Investigation of InGaN/GaN laser degradation based on luminescence properties von Wen, Pengyan, Zhang, Shuming, Liu, Jianping, Li, Deyao, Zhang, Liqun, Sun, Qian, Tian, Aiqin, Zhou, Kun, Zhou, Taofei, Yang, Hui

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OPGW positioning and early warning method based on a Brillouin distributed optical fiber sensor and machine learning von Xia, Meng, Tang, Xiaohui, Wang, Ying, Li, Can, Wei, Yong, Zhang, Jiaju, Jiang, Taofei, Dong, Yongkang

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Design of Piezoelectric Inertial Actuator with Wedge‐shaped Foot Structure for Cell Manipulation von Long, Taofei, Wen, Jianming, Lin, Shengrong, Li, Shengjie, Li, Xinhui, Hu, Yili

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Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode von Wang, Qiliang, Wang, Tingting, Pu, Taofei, Cheng, Shaoheng, Li, Xiaobo, Li, Liuan, Ao, Jinping

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Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor von Li, Liuan, Pu, Taofei, Li, Xiaobo, Ao, Jin-Ping

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Effect of Helium-Implanted Edge Termination on GaN-on-GaN Schottky Barrier Diode Temperature Sensors von Li, Xiaobo, Lin, Feng, Pu, Taofei, Li, Xicong, Li, Bo, Li, Shuai, Han, Jiajun, Wang, Xinzhong, Lu, Youming, Liu, Xinke

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High-Spatial-Resolution Fast BOTDA for Dynamic Strain Measurement Based on Differential Double-Pulse and Second-Order Sideband of Modulation von Yongkang Dong, Dexin Ba, Taofei Jiang, Dengwang Zhou, Hongying Zhang, Chengyu Zhu, Zhiwei Lu, Hui Li, Liang Chen, Xiaoyi Bao

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Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes von Wang, Ying, Pu, Taofei, Li, Xiaobo, Li, Liuan, Ao, Jin-Ping

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Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode von Li, Liuan, Li, Xiaobo, Pu, Taofei, Cheng, Shaoheng, Li, Hongdong, Ao, Jin-Ping

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Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment von Li, Xiaobo, Lin, Feng, Wu, Junye, Zhang, Zhiyue, Song, Lijun, Pu, Taofei, Li, Xicong, Lin, Xinnan, Lu, Youming, Liu, Xinke

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Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer von Zhou, Jiyu, Li, Xiaobo, Pu, Taofei, He, Yue, Wang, Xiao, Bu, Yuyu, Li, Liuan, Ao, Jin-Ping

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