Enhancing InGaN-based solar cell efficiency through localized surface plasmon interaction by embedding Ag nanoparticles in the absorbing layer von Wang, Jyh-Yang, Tsai, Fu-Ji, Huang, Jeng-Jie, Chen, Cheng-Yen, Li, Nola, Kiang, Yean-Woei, Yang, C C

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Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer von Fenwick, William E., Melton, Andrew, Xu, Tianming, Li, Nola, Summers, Christopher, Jamil, Muhammad, Ferguson, Ian T.

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Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates von Li, Nola, Wang, Shen-Jie, Park, Eun-Hyun, Feng, Zhe Chuan, Tsai, Hung-Lin, Yang, Jer-Ren, Ferguson, Ian

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MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications von Yu, Hongbo, Wang, Shenjie, Li, Nola, Fenwick, William, Melton, Andrew, Klein, B., Ferguson, Ian

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Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates von Wang, Shen-Jie, Li, Nola, Park, Eun-Hyun, Lien, Siou-Cheng, Feng, Zhe Chuan, Valencia, Adriana, Nause, Jeff, Ferguson, Ian

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MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer von FENWICK, William E, LI, Nola, TIANMING XU, MELTON, Andrew, SHENJIE WANG, HONGBO YU, SUMMERS, Christopher, JAMIL, Muhammad, FERGUSON, Ian T

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Metalorganic chemical vapour deposition of GaN layers on ZnO substrates using α-Al2O3 as a transition layer von Wang, Shen-Jie, Li, Nola, Yu, Hong Bo, Feng, Zhe Chuan, Summers, Christopher, Ferguson, Ian

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Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy von LI, Nola, WANG, Shen-Jie, HUANG, Chung-Lung, ZHE CHUAN FENG, VALENCIA, Adriana, NAUSE, Jeff, SUMMERS, Christopher, FERGUSON, Ian

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MOCVD growth of GaN-based materials on ZnO substrates von Wang, Shen-Jie, Li, Nola, Park, Eun-Hyun, Feng, Zhe Chuan, Valencia, Adriana, Nause, Jeff, Kane, Matthew, Summers, Chris, Ferguson, Ian

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Metalorganic chemical vapour deposition of GaN layers on ZnO substrates using α-Al 2 O 3 as a transition layer von Wang, Shen-Jie, Li, Nola, Yu, Hong Bo, Feng, Zhe Chuan, Summers, Christopher, Ferguson, Ian

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Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al 2 O 3 interlayer von Fenwick, William E., Melton, Andrew, Xu, Tianming, Li, Nola, Summers, Christopher, Jamil, Muhammad, Ferguson, Ian T.

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MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al(2)O(3) interlayer von Fenwick, William E, Li, Nola, Xu, Tianming, Melton, Andrew, Wang, Shenjie, Yu, Hongbo, Summers, Christopher, Jamil, Muhammad, Ferguson, Ian T

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Effects of N doping on ZnO thin films grown by MOVPE von Zaidi, Tahir, Fenwick, William E., Melton, Andrew, Li, Nola, Gupta, Shalini, Yu, Hongbo, Ougazzaden, Abdallah, Ferguson, Ian

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MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al 2O 3 interlayer von Fenwick, William E., Li, Nola, Xu, Tianming, Melton, Andrew, Wang, Shenjie, Yu, Hongbo, Summers, Christopher, Jamil, Muhammad, Ferguson, Ian T.

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Effect of an Al 2O 3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy von Li, Nola, Wang, Shen-Jie, Huang, Chung-Lung, Feng, Zhe Chuan, Valencia, Adriana, Nause, Jeff, Summers, Christopher, Ferguson, Ian

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Imitating Broadband Diurnal Light Variations Using Solid State Light Sources von FERGUSON, Ian, MELTON, Andrew, LI, Nola, NICOL, David, PARK, Eun Hyun, TOSINI, Gianluca

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High indium composition (≫20%) InGaN epi-layers on ZnO substrates for very high efficiency solar cells von Melton, A., Jampana, B., Li, N., Jamil, M., Zaidi, T., Fenwick, W., Opila, R., Honsberg, C., Ferguson, I.

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Influence of High Indium Composition InGaN on Lattice Matched ZnO Sacrificial Substrates von LI, Nola, WANG, Shen-Jie, PARK, Eun-Hyun, FENG, Zhe Chuan, TSAI, Hung-Lin, YANG, Jer-Ren, VALENCIA, Adriana, NAUSE, Jeff, SUMMERS, Christoper, FERGUSON, Ian

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LED vs. halogen: An MR16 case study von Nicol, David, Li, Nola, Ferguson, Ian

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Technical hurdles loom on the path to general illumination von Nicol, David, Li, Nola, Ferguson, Ian

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