Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm von Lhostis, S., Ayoub, B., Sart, C., Moreau, S., Souchier, E., Gusmao Cacho, M. G., Deloffre, E., Mermoz, S., Rey, C., Le Roux, F., Aybeke, E., Gallois-Garreignot, S., Frémont, H., Tournier, A.

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Carbon-doped GeTe: A promising material for Phase-Change Memories von Betti Beneventi, G., Perniola, L., Sousa, V., Gourvest, E., Maitrejean, S., Bastien, J.C., Bastard, A., Hyot, B., Fargeix, A., Jahan, C., Nodin, J.F., Persico, A., Fantini, A., Blachier, D., Toffoli, A., Loubriat, S., Roule, A., Lhostis, S., Feldis, H., Reimbold, G., Billon, T., De Salvo, B., Larcher, L., Pavan, P., Bensahel, D., Mazoyer, P., Annunziata, R., Zuliani, P., Boulanger, F.

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Evidence of Germanium precipitation in phase-change Ge1−xTex thin films by Raman scattering von Gourvest, E., Lhostis, S., Kreisel, J., Armand, M., Maitrejean, S., Roule, A., Vallée, C.

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Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks von Martinez, E., Gaumer, C., Lhostis, S., Licitra, C., Silly, M., Sirotti, F., Renault, O.

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Thermal management of electronic devices by composite materials integrated in silicon von Ollier, Emmanuel, Soupremanien, U., Remondière, V., Dijon, J., Le Poche, H., Seiler, A.L., Lefevre, F., Lips, S., Kinkelin, C., Rolland, N., Rolland, P.A., Zegaoui, M., Lhostis, S., Ancey, P., Descouts, B., Kaplan, Y.

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Observation of HfO2 thin films by deep UV spectroscopic ellipsometry von FERRIEU, F, DABERTRAND, K, LHOSTIS, S, IVANOVA, V, MARTINEZ, E, LICITRA, C, ROLLAND, G

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Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks von GAUMER, C, MARTINEZ, E, CHABLI, A, LHOSTIS, S, GUITTET, M.-J, GROS-JEAN, M, BARNES, J.-P, LICITRA, C, ROCHAT, N, BARRETT, N, BERTIN, F

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Thin films of the double perovskite Sr2FeMOO6 deposited by pulsed laser deposition von BORGES, R. P, LHOSTIS, S, BARI, M. A, VERSLUIJS, J. J, LUNNEY, J. G, COEY, J. M. D, BESSE, M, CONTOUR, J.-P

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Reliability of the hybrid bonding level using submicrometric bonding pads von Lhostis, S., Ayoub, B., Frémont, H., Moreau, S., Mattei, J.-G., Lamontagne, P., Tournier, A.

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Electrical and Chemical Properties of the HfO[sub 2]/SiO[sub 2]/Si Stack: Impact of HfO[sub 2] Thickness and Thermal Budget von Martinez, E., Leroux, C., Benedetto, N., Gaumer, C., Charbonnier, M., Licitra, C., Guedj, C., Fillot, F., Lhostis, S.

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Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques von Cosnier, V., Besson, P., Loup, V., Vandroux, L., Minoret, S., Cassé, M., Garros, X., Pedini, J-M., Lhostis, S., Dabertrand, K., Morin, C., Wiemer, C., Perego, M., Fanciulli, M.

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Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties von Gourvest, E., Pelissier, B., Vallée, C., Roule, A., Lhostis, S., Maitrejean, S.

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Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements von Moreau, S., Jourdon, J., Lhostis, S., Bouchu, D., Ayoub, B., Arnaud, L., Frémont, H.

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Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies von Dubourdieu, C., Roussel, H., Jimenez, C., Audier, M., Sénateur, J.P., Lhostis, S., Auvray, L., Ducroquet, F., O'Sullivan, B.J., Hurley, P.K., Rushworth, S., Hubert-Pfalzgraf, L.

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Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements von Moreau, S., Jourdon, Joris, Lhostis, S., Bouchu, D., Ayoub, Bassel, Arnaud, L., Fremont, Helene

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Applications of X-Ray Reflectometry to Develop and Monitor FEOL Processes for sub-45nm Technology Nodes von Nolot, E, Bogumilowicz, Y, Lhostis, S, Danel, A

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New insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology von Brunet, L, Garros, X, Cassé, M, Weber, O, Andrieu, F, Fenouillet-Béranger, C, Perreau, P, Martin, F, Charbonnier, M, Lafond, D, Gaumer, C, Lhostis, S, Vidal, V, Brevard́, L, Tosti, L, Denorme, S, Barnola, S, Damlencourt, J F, Loup, V, Reimbold, G, Boulanger, F, Faynot, O, Bravaix, A

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Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction von Beneventi, G Betti, Perniola, L, Fantini, A, Blachier, D, Toffoli, A, Gourvest, E, Maitrejean, S, Sousa, V, Jahan, C, Nodin, J F, Persico, A, Loubriat, S, Roule, A, Lhostis, S, Feldis, H, Reimbold, G, Billon, T, De Salvo, B, Larcher, L, Pavan, P, Bensahel, D, Mazoyer, P, Annunziata, R, Boulanger, F

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Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100) von SIBAI, A, LHOSTIS, S, DUBOURDIEU, C, DUCROQUET, F, ROZIER, Y, SALICIO, O, AMTABLIAN, S, DUBOIS, C, LEGRAND, J, SENATEUR, J. P, AUDIER, M, HUBERT-PFALZGRAFF, L

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Electrical characterization of SrTiO3 thin films deposited on Si(001) substrate by liquid injection MOCVD von LEGRAND, J, LHOSTIS, S, DUCROQUET, F, CHANG, Y, MILITARU, L, LAMARD, C, SIBAI, A, AUVRAY, L, AUDIER, M, SENATEUR, J.-P, DUBOURDIEU, C

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