Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer von Derluyn, J., Boeykens, S., Cheng, K., Vandersmissen, R., Das, J., Ruythooren, W., Degroote, S., Leys, M. R., Germain, M., Borghs, G.

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Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates von Wang, G., Leys, M.R., Nguyen, N.D., Loo, R., Brammertz, G., Richard, O., Bender, H., Dekoster, J., Meuris, M., Heyns, M.M., Caymax, M.

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The role of Al on Ohmic contact formation on n -type GaN and AlGaN ∕ GaN von Van Daele, B., Van Tendeloo, G., Ruythooren, W., Derluyn, J., Leys, M. R., Germain, M.

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Selective area growth of high quality InP on Si (001) substrates von Wang, G., Leys, M. R., Loo, R., Richard, O., Bender, H., Waldron, N., Brammertz, G., Dekoster, J., Wang, W., Seefeldt, M., Caymax, M., Heyns, M. M.

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Formation of metallic In in InGaN∕GaN multiquantum wells von Daele, B. Van, Tendeloo, G. Van, Jacobs, K., Moerman, I., Leys, M. R.

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Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells von Mols, Y., Leys, M.R., Simons, E., Poortmans, J., Borghs, G.

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Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC von Boeykens, S., Leys, M.R., Germain, M., Belmans, R., Borghs, G.

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Low-loss, compact, and polarization independent PHASAR demultiplexer fabricated by using a double-etch process von den Besten, J.H., Dessens, M.P., Herben, C.G.P., Leijtens, X.J.M., Groen, F.H., Leys, M.R., Smit, M.K.

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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures von Jacobs, K., Daele, B.Van, Leys, M.R., Moerman, I., Tendeloo, G.Van

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Deep defects in GaN/AlGaN/SiC heterostructures von Kindl, D., Hubík, P., Krištofik, J., Mareš, J. J., Výborný, Z., Leys, M. R., Boeykens, S.

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Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy von Derluyn, J., Moerman, I., Leys, M. R., Patriarche, G., Sęk, G., Kudrawiec, R., Rudno-Rudziński, W., Ryczko, K., Misiewicz, J.

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Polarization independent dilated WDM cross-connect on InP von Herben, C.G.P., Maat, D.H.P., Leijtens, X.J.M., Leys, M.R., Oei, Y.S., Smit, M.K.

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Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE von Leys, M.R

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Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors von Van Daele, B., Van Tendeloo, G., Derluyn, J., Shrivastava, P., Lorenz, A., Leys, M. R., Germain, M.

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Andreev reflection at superconducting contacts to GaAs/AlGaAs heterostructures von LENSSEN, K.-M. H, MATTERS, M, HARMANS, C. J. P. M, MOOIJ, J. E, LEYS, M. R, VAN DER VLEUTEN, W, WOLTER, J. H

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Morphology of homo-epitaxial vicinal (1 0 0) III–V surfaces von Verschuren, C.A., Leys, M.R., Rongen, R.T.H., Vonk, H., Wolter, J.H.

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A modified BCF model to quantitatively describe the (1 0 0)InP growth rate in chemical beam epitaxy von Verschuren, C.A, Leys, M.R, Marschner, T, Vonk, H, Wolter, J.H

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A chopped quantum-well polarization-independent interferometric switch at 1.53 μm von DORREN, B. H. P, SILOV, A. Y, LEYS, M. R, DUKERS, D. M. H, HAVERKORT, J. E. M, MAAT, D. H. P, ZHU, Y, GROEN, F. H, WOLTER, J. H

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Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C von Koenraad, P M, Blom, F A P, Langerak, C J G M, Leys, M R, Perenboom, J A A J, Singleton, J, Spermon, S J R M, Vleuten, W C van der, Voncken, A P J, Wolter, J H

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Study of 1/f noise in InP grown by CBE von Chen, X Y, Leys, M R

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