Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor von Verhulst, Anne S., Sorée, Bart, Leonelli, Daniele, Vandenberghe, William G., Groeseneken, Guido

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Drain voltage dependent analytical model of tunnel field-effect transistors von Verhulst, Anne S., Leonelli, Daniele, Rooyackers, Rita, Groeseneken, Guido

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Temperature impact on the tunnel fet off-state current components von Agopian, Paula Ghedini Der, Martino, Márcio Dalla Valle, Filho, Sebastião Gomes dos Santos, Martino, João Antonio, Rooyackers, Rita, Leonelli, Daniele, Claeys, Cor

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Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width von Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido

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Silicide Engineering to Boost Si Tunnel Transistor Drive Current von Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido

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Fabrication and Analysis of a / Heterojunction Line Tunnel FET von Walke, Amey M., Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S., Kuo-Hsing Kao, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K., Heyns, Marc M., Collaert, Nadine, Thean, Aaron Voon-Yew

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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking von Duan, Xinlv, Huang, Kailiang, Feng, Junxiao, Niu, Jiebin, Qin, Haibo, Yin, Shihui, Jiao, Guangfan, Leonelli, Daniele, Zhao, Xiaoxuan, Wang, Zhaogui, Jing, Weiliang, Wang, Zhengbo, Wu, Ying, Xu, Jeffrey, Chen, Qian, Chuai, Xichen, Lu, Congyan, Wang, Wenwu, Yang, Guanhua, Geng, Di, Li, Ling, Liu, Ming

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Exploration of Scandium Doping in SbTe for Phase Change Memory Application von Barci, Marinela, Leonelli, Daniele, Zhou, Xue, Wang, Xiaojie, Garbin, Daniele, Jayakumar, Ganesh, Witters, Thomas, Vergel, Nathali Franchina, Kundu, Shreya, Palayam, Senthil Vadakupudhu, Jiao, Huifang, Wu, Hao, Kar, Gouri Sankar

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Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets von Kuo-Hsing Kao, Verhulst, A. S., Vandenberghe, W. G., Soree, B., Magnus, W., Leonelli, D., Groeseneken, G., De Meyer, K.

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Silicide Engineering to Boost Si Tunnel Transistor Drive Current von Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S., Gendt, Stefan De, Heyns, Marc M., Groeseneken, Guido

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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F 2 by Monolithic Stacking von Duan, Xinlv, Huang, Kailiang, Feng, Junxiao, Niu, Jiebin, Qin, Haibo, Yin, Shihui, Jiao, Guangfan, Leonelli, Daniele, Zhao, Xiaoxuan, Wang, Zhaogui, Jing, Weiliang, Wang, Zhengbo, Wu, Ying, Xu, Jeffrey, Chen, Qian, Chuai, Xichen, Lu, Congyan, Wang, Wenwu, Yang, Guanhua, Geng, Di, Li, Ling, Liu, Ming

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Fabrication and Analysis of a rm Si / rm Si 0.55 rm Ge 0.45 Heterojunction Line Tunnel FET von Walke, Amey M, Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S, Kao, Kuo-Hsing, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K, Heyns, Marc M, Collaert, Nadine, Thean, Aaron Voon-Yew

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Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET von Walke, Amey M, Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S, Kao, Kuo-Hsing, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K, Heyns, Marc, Collaert, Nadine, Thean, Aaron Voon-Yew

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Design, Fabrication and Characterization of Tunnel Field Effect Transistors for Ultra-Low Power CMOS Applications (Ontwerp, fabricatie en karakterisatie van tunnel veld effect tran... von Leonelli, Daniele

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Modeling the single-gate, double-gate, and gate-all-around tunnelfield-effect transistor von Verhulst, Anne S., Sorée, Bart, Leonelli, Daniele, Vandenberghe, William G., Groeseneken, Guido

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Trends and Challenges in Si and Hetero-Junction Tunnel Field Effect Transistors von Claeys, Cor, Leonelli, Daniele, Rooyackers, Rita, Vandooren, Anne, Verhulst, Anne, Heyns, Marc, Groeseneken, Guido, De Gendt, Stefan

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METHOD OF METAL INTEGRATION FOR FABRICATING INTEGRATED DEVICE von LEONELLI, Daniele, LIU, Yanxiang, CHEN, Yijian

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(Invited) Boosting the On-Current of Si-Based Tunnel Field-Effect Transistors von Verhulst, Anne S., Vandenberghe, William G., Leonelli, Daniele, Rooyackers, Rita, Vandooren, Anne, Pourtois, Geoffrey, De Gendt, S., Heyns, Marc M., Groeseneken, Guido

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Impact of external magnetic fields on STT-MRAM von Dieny, Bernard, Aggarwal, Sanjeev, Naik, Vinayak Bharat, Couet, Sebastien, Coughlin, Thomas, Fukami, Shunsuke, Garello, Kevin, Guedj, Jack, Incorvia, Jean Anne C, Lebrun, Laurent, Lee, Kyung-Jin, Leonelli, Daniele, Noh, Yonghwan, Salimy, Siamak, Soss, Steven, Thomas, Luc, Wang, Weigang, Worledge, Daniel

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Impact of External Magnetic Fields on STT-MRAM: An Application Note von Dieny, Bernard, Aggarwal, Sanjeev, Naik, Vinayak Bharat, Couet, Sebastien, Coughlin, Thomas, Fukami, Shunsuke, Garello, Kevin, Guedj, Jack, Incorvia, Jean Anne C., Lebrun, Laurent, Lee, Kyung-Jin, Leonelli, Daniele, Noh, Yonghwan, Salimy, Siamak, Soss, Steven, Thomas, Luc, Wang, Weigang, Worledge, Daniel C.

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