Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes von Jae-Hyung Jang, Cueva, G., Hoke, W.E., Lemonias, P.J., Fay, P., Adesida, I.

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Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates von Hoke, W. E., Lemonias, P. J., Mosca, J. J., Lyman, P. S., Torabi, A., Marsh, P. F., McTaggart, R. A., Lardizabal, S. M., Hetzler, K.

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Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy von Hoke, W. E., Lemonias, P. J., Kennedy, T. D., Torabi, A., Tong, E. K., Bourque, R. J., Jang, J.-H., Cueva, G., Dumka, D. C., Adesida, I., Chang, K. L., Hsieh, K. C.

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The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes von Jang, J.H., Cueva, G., Dumka, D.C., Hoke, W.E., Lemonias, P.J., Fay, P., Adesida, I.

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Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films von Hoke, W.E., Lemonias, P.J., Weir, D.G.

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Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride von JOKE, W. E, LEMONIAS, P. J

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Low-temperature metalorganic growth of CdTe and HgTe films using ditertiarybutyltelluride von HOKE, W. E, LEMONIAS, P. J

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Carbon tetrabromide carbon doping of molecular beam epitaxial (GaAs) films von Hoke, W. E., Weir, D. G., Lemonias, P. J., Hendriks, H. T.

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Low noise metamorphic HEMT devices and amplifiers on GaAs substrates von Marsh, P.F., Chu, S.L.G., Lardizabal, S.M., Leoni, R.E., Kang, S., Wohlert, R., Bowlby, A.M., Hoke, W.E., McTaggart, R.A., Whelan, C.S., Lemonias, P.J., McIntosh, P.M., Kazior, T.E.

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Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substrates von HOKE, W. E, LEMONIAS, P. J, TRACZEWSKI, R

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Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates von Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.

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Metalorganic growth of HgTe and CdTe at low temperatures using diallyltelluride von KORENSTEIN, R, HOKE, W. E, LEMONIAS, P. J, HIGA, K. T, HARRIS, D. C

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Carbon doping and lattice contraction of GaAs films grown by conventional molecular beam epitaxy von HOKE, W. E, LEMONIAS, P. J, WEIR, D. G, HENDRIKS, H. T, JACKSON, G. S

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Enhanced radiative absorption of thin, heavily beryllium-doped GaAs films von HOKE, W. E, WEIR, D. G, LEMONIAS, P. J, LYMAN, P. S

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Metalorganic growth of epitaxial films of CdTe and HgCdTe on sapphire substrates von HOKE, W. E, TRACZEWSKI, R, KREISMANIS, V. G, KORENSTEIN, R, LEMONIAS, P. J

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Metalorganic growth of high-purity HgCdTe films von HOKE, W. E, LEMONIAS, P. J, TRACZEWSKI, R

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High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition von SPECHT, L. T, HOKE, W. E, OGUZ, S, LEMONIAS, P. J, KREISMANIS, V. G, KORENSTEIN, R

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Practical aspects of solid source molecular beam epitaxial growth of phosphorus-containing films von Hoke, W. E., Lemonias, P. J.

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AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates von Hoke, W. E., Lyman, P. S., Mosca, J. J., McTaggart, R. A., Lemonias, P. J., Beaudoin, R. M., Torabi, A., Bonner, W. A., Lent, B., Chou, L.-J., Hsieh, K. C.

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Carbon doping of MBE GaAs and Ga0.7Al0.3As films using a graphite filament von Hoke, W.E., Lemonias, P.J., Lyman, P.S., Hendriks, H.T., Weir, D., Colombo, P.

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