Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates von Currie, M. T., Leitz, C. W., Langdo, T. A., Taraschi, G., Fitzgerald, E. A., Antoniadis, D. A.

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors von Leitz, C. W., Currie, M. T., Lee, M. L., Cheng, Z.-Y., Antoniadis, D. A., Fitzgerald, E. A.

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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing von Currie, M. T., Samavedam, S. B., Langdo, T. A., Leitz, C. W., Fitzgerald, E. A.

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Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates von Lee, Minjoo L., Leitz, C. W., Cheng, Z., Pitera, A. J., Langdo, T., Currie, M. T., Taraschi, G., Fitzgerald, E. A., Antoniadis, Dimitri A.

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Film thickness constraints for manufacturable strained silicon CMOS von Fiorenza, J G, Braithwaite, G, Leitz, C W, Currie, M T, Yap, J, Singaporewala, F, Yang, V K, Langdo, T A, Carlin, J, Somerville, M, Lochtefeld, A, Badawi, H, Bulsara, M T

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Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates von Yang, V. K., Groenert, M., Leitz, C. W., Pitera, A. J., Currie, M. T., Fitzgerald, E. A.

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High quality Ge on Si by epitaxial necking von Langdo, T. A., Leitz, C. W., Currie, M. T., Fitzgerald, E. A., Lochtefeld, A., Antoniadis, D. A.

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Hole mobility enhancements in strained Si/Si1−yGey  p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates von Leitz, C. W., Currie, M. T., Lee, M. L., Cheng, Z.-Y., Antoniadis, D. A., Fitzgerald, E. A.

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Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers von Ringel, S. A., Carlin, J. A., Andre, C. L., Hudait, M. K., Gonzalez, M., Wilt, D. M., Clark, E. B., Jenkins, P., Scheiman, D., Allerman, A., Fitzgerald, E. A., Leitz, C. W.

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Dislocation glide and blocking kinetics in compositionally graded SiGe/Si von Leitz, C. W., Currie, M. T., Kim, A. Y., Lai, J., Robbins, E., Fitzgerald, E. A., Bulsara, M. T.

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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth von Morris, R J H, Grasby, T J, Hammond, R, Myronov, M, Mironov, O A, Leadley, D R, Whall, T E, Parker, E H C, Currie, M T, Leitz, C W, Fitzgerald, E A

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Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry von Vineis, C.J., Erdtmann, M., Leitz, C.W.

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Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys von Eguchi, S., Hoyt, J. L., Leitz, C. W., Fitzgerald, E. A.

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Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates von Leitz, C.W., Vineis, C.J., Carlin, J., Fiorenza, J., Braithwaite, G., Westhoff, R., Yang, V., Carroll, M., Langdo, T.A., Matthews, K., Kohli, P., Rodder, M., Wise, R., Lochtefeld, A.

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Coplanar integration of lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1-xGex/Si virtual substrates von PITERA, Arthur J, TARASCHI, G, LEE, M. L, LEITZ, C. W, CHENG, Z.-Y, FITZGERALD, E. A

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Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates von YANG, V. K, GROENERT, M. E, TARASCHI, G, LEITZ, C. W, PITERA, A. J, CURRIE, M. T, CHENG, Z, FITZGERALD, E. A

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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates von Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Fitzgerald, E.A., Hoyt, J.L., Antoniadas, D.A.

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Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate von Yang, V. K., Ting, S. M., Groenert, M. E., Bulsara, M. T., Currie, M. T., Leitz, C. W., Fitzgerald, E. A.

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Fully depleted n-MOSFETs on supercritical thickness strained SOI von Lauer, I., Langdo, T.A., Cheng, Z.-Y., Fiorenza, J.G., Braithwaite, G., Currie, M.T., Leitz, C.W., Lochtefeld, A., Badawi, H., Bulsara, M.T., Somerville, M., Antoniadis, D.A.

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Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates von Andre, C. L., Boeckl, J. J., Leitz, C. W., Currie, M. T., Langdo, T. A., Fitzgerald, E. A., Ringel, S. A.

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