High-density MIM capacitors with HfO2 dielectrics von Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Lehnen, Peer, Chang, Chun-Yen

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The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode von Lu, Wen-Tai, Lin, Po-Ching, Huang, Tiao-Yuan, Chien, Chao-Hsin, Yang, Ming-Jui, Huang, Ing-Jyi, Lehnen, Peer

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METHOD AND DEVICE FOR DEPOSITING A LAYER CONTAINING A GROUP FIVE ELEMENT IN A PROCESS CHAMBER, AND SUBSEQUENT CLEANING OF THE PROCESS CHAMBER von MICCOLI, Ilio, LARHRIB, Hassan, LEHNEN, Peer

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Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor Deposition von Adelmann, C., Lehnen, P., Van Elshocht, S., Zhao, C., Brijs, B., Franquet, A., Conard, T., Roeckerath, M., Schubert, J., Boissière, O., Lohe, C., De Gendt, S.

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Improved reliability of HfO2/SiON gate stack by fluorine incorporation von LU, Wen-Tai, CHIEIN, Chao-Hsin, LAN, Wen-Ting, LEE, Tsung-Chieh, LEHNEN, Peer, HUANG, Tiao-Yuan

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(Invited) Innovative Deposition Technology for Advanced Materials von Baumann, Peter K., Heuken, Michael, Weber, Ulrich, Lehnen, Peer, Senzaki, Yoshi, Lindner, Johannes, Lu, Brian, Karim, Ziaul, Schineller, Bernd

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High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory von Chien, Chao-Hsin, Wang, Ding-Yeong, Yang, Ming-Jui, Lehnen, P, Leu, Ching-Chich, Chuang, Shiow-Huey, Huang, Tiao-Yuan, Chang, C.Y

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Effects of Low-temperature NH[sub 3] Treatment on the Characteristics of HfO[sub 2]∕SiO[sub 2] Gate Stack von Lu, Wen-Tai, Chien, Chao-Hsin, Huang, Ing-Jye, Yang, Ming-Jui, Lehnen, Peer, Huang, Tiao-Yuan

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High-density MIM capacitors with HfO 2 dielectrics von Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Lehnen, Peer, Chang, Chun-Yen

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프로세스 챔버에서 제5 족 원소를 포함하는 층을 증착시키고 그리고 프로세스 챔버의 후속 세정을 위한 방법 및 디바이스 von LEHNEN PEER, MICCOLI ILIO, LARHRIB HASSAN

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HfO2 MIS capacitor with copper gate electrode von PERNG, Tsu-Hsiu, CHIEN, Chao-Hsin, CHEN, Ching-Wei, YANG, Ming-Jui, LEHNEN, Peer, CHANG, Chun-Yen, HUANG, Tiao-Yuan

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AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics von Karim, Zia, Barbar, Ghassan, Boissière, Olivier, Lehnen, Peer, Lohe, Christoph, Seidel, Tom, Adelmann, Christoph, Conard, Thierry, O'Sullivan, Barry, Ragnarsson, Lars-Aåke, Schram, Tom, Van Elshocht, Sven, De Gendt, Stefan

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Effects of Low-temperature NH3 Treatment on the Characteristics of HfO2/SiO2 Gate Stack von Lu, Wen-Tai, Chien, Chao-Hsin, Huang, Ing-Jye, Yang, Ming-Jui, Lehnen, Peer, Huang, Tiao-Yuan

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Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics von Karim, Zia, Biossiere, Olivier, Lohe, Christoph, Zhang, Zhihong, Park, Woong, Manke, Christian, Baumann, Peter K., Dalton, Jeremie, Ramanathan, Sasangan, Lindner, Johannes, Seidel, Tom, Lehnen, Peer

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Method and device for depositing a layer containing a group five element in a process chamber, and subsequent cleaning of the process chamber von LEHNEN, PEER, LARHRIB, HASSAN, MICCOLI, ILIO

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METHOD AND DEVICE FOR DEPOSITING A LAYER CONTAINING A GROUP FIVE ELEMENT IN A PROCESS CHAMBER, AND SUBSEQUENT CLEANING OF THE PROCESS CHAMBER von MICCOLI, Ilio, LARHRIB, Hassan, LEHNEN, Peer

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Verfahren und Vorrichtung zum Abscheiden einer ein Element der V. Hauptgruppe enthaltenen Schicht in einer Prozesskammer und anschließenden Reinigen der Prozesskammer von Lehnen, Peer, Larhrib, Hassan, Miccoli, Ilio

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CVD (chemical vapor deposition) reactor with mechanical cleaning element for cleaning exhaust rings von LEHNEN PEER, SILVA HUGO

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DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties von Adelmann, Christoph, Van Elshocht, Sven, Lehnen, Peer, Conard, Thierry, Franquet, Alexis, Zhao, Chao, Ragnarsson, Lars-Ake, Chang, Vincent, Cho, Hag-Ju, Hong-Yu, Yu, De Gendt, Stefan

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CVD system having particle separator von Lehnen, Peer, Mallmann, Heinrich, Goeres, Wilfried

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