Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits von Jibin Zou, Runsheng Wang, Mulong Luo, Ru Huang, Nuo Xu, Pengpeng Ren, Changze Liu, Weize Xiong, Jianping Wang, Jinhua Liu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang

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A capacitance-based method for experimental determination of metallurgical channel length of submicron LDD MOSFETs von Lee, Shiuh-Wuu

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New observations on AC NBTI induced dynamic variability in scaled high-κ/Metal-gate MOSFETs: Characterization, origin of frequency dependence, and impacts on circuits von Changze Liu, Pengpeng Ren, Runsheng Wang, Ru Huang, Jiaojiao Ou, Qianqian Huang, Jibin Zou, Jianping Wang, Jingang Wu, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang

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Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation von Lee, Shiuh-Wuu

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Guest Editorial: Special Issue on CAD Technologies von Wuu Lee, Shiuh

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Off-state gate current in n-channel MOSFETs with nitrided oxide gate dielectrics von Wu, A.T., Lee, S.-W., Murali, V., Garner, M.

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A study on the physical mechanism in the recovery of gate capacitance to Cox in implanted polysilicon MOS structures von SHIUH-WUU LEE, CHUNLIN LIANG, CHENG-SHENG PAN, LIN, W, MARK, J. B

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A proposed method for determining a MOSFET gate electrode's bottom dimension and the on-state fringing capacitance von Lee, S.-W.

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A unified circuit model for bipolar transistors including quasi-saturation effects von Kull, G.M., Nagel, L.W., Shiuh-Wuu Lee, Lloyd, P., Prendergast, E.J., Dirks, H.

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Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modeling von Lee, S.-W.

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A compact IGFET model-ASIM von Lee, S.-W., Rennick, R.C.

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Integrated TCAD and ECAD solutions - a paradigm shift von Shiuh-Wuu Lee

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Surface-based finite element method for large-scale 3D circuit modeling von Jiao, D., Chakravarty, S., Changhong Dai, Shiuh-Wuu Lee

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Hermann K. Gummel and His Unique Legacy in the Field of CAD Technology for Integrated Electronics: Six Former Coworkers Remember and Reminisce von Haruta, Ken, Lee, Shiuh-Wuu, McAndrew, Colin, Meinerzhagen, Bernd, Nagel, Laurence W., Prendergast, E. James

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Circuit performance of CMOS technologies with silicon dioxide and reoxidized nitrided oxide gate dielectrics von Lee, S.-W., Chan, T.-Y., Wu, A.T.

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New insights into AC RTN in scaled high-к / metal-gate MOSFETs under digital circuit operations von Jibin Zou, Runsheng Wang, Nanbo Gong, Ru Huang, Xiaoqing Xu, Jiaojiao Ou, Changze Liu, Jianping Wang, Jinhua Liu, Jingang Wu, Shaofeng Yu, Pengpeng Ren, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang

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A closed-loop evaluation and validation of a method for determining the scattering limited carrier velocity in MOSFETs von Lee, S.-W., Chan, T.-Y.

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Characterization Of Metallurgical Channel Length And Gate Electrode's Physical Dimension For Device Analysis And Calibration Of Numerical Process And Device Simulators von Shiuh-Wuu Lee

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Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K von Chan, T.-Y., Lee, S.-W., Gaw, H.

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Isolation structure configurations for modifying stresses in semiconductor devices von Ma, Qing, Lee, Jin, Fujimoto, Harry, Dai, Changhong, Lee, Shiuh-Wuu, Eiles, Travis, Seshan, Krishna

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