Fullerene thermal insulation for phase change memory von Kim, Cheolkyu, Suh, Dong-Seok, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Tae-Yon, Khang, Yoonho, Cahill, David G.

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A Time-of-Flight 3-D Image Sensor With Concentric-Photogates Demodulation Pixels von Tae-Yon Lee, Yong-Jei Lee, Dong-Ki Min, Seung-Hoon Lee, Wang-Hyun Kim, Jung-Kyu Jung, Ovsiannikov, Ilia, Young-Gu Jin, Yoondong Park, Fossum, Eric R.

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Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors von Lim, Seon-Jeong, Leem, Dong-Seok, Park, Kyung-Bae, Kim, Kyu-Sik, Sul, Sangchul, Na, Kyoungwon, Lee, Gae Hwang, Heo, Chul-Joon, Lee, Kwang-Hee, Bulliard, Xavier, Satoh, Ryu-Ichi, Yagi, Tadao, Ro, Takkyun, Im, Dongmo, Jung, Jungkyu, Lee, Myungwon, Lee, Tae-Yon, Han, Moon Gyu, Jin, Yong Wan, Lee, Sangyoon

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Growth and surface alloying of Fe on Pt(9 9 7) von Lee, Tae-Yon, Sarbach, Samuel, Kuhnke, Klaus, Kern, Klaus

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Rapid crystallization of GeTe–Bi2Te3 mixed layer von Lee, Tae-Yon, Kim, Cheolkyu, Kang, Younseon, Suh, Dong-Seok, Kim, Kijoon H. P., Khang, Yoonho

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Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys von Shin, H. J., Kang, Youn-Seon, Benayad, Anass, Kim, Ki-Hong, Lee, Y. M., Jung, M.-C., Lee, Tae-Yon, Suh, Dong-Seok, Kim, Kijoon H. P., Kim, CheolKyu, Khang, Yoonho

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Electronic structure of ( Ge 2 Sb 2 Te 5 ) 1 − x ( In 3 SbTe 2 ) x investigated by x-ray photoelectron spectroscopy von Benayad, Anass, Kang, YounSeon, Shin, Hyun-Joon, Kim, Kihong, Suh, Dong-Seok, Kim, KiJoon, Kim, CheolKyu, Lee, Tae-Yon, Noh, Jin-Seo, Lee, JaeCheol, Khang, YoonHo

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Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices von Kim, Cheolkyu, Kang, Dongmin, Lee, Tae-Yon, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Junho, Nam, Sung-Wook, Kim, Ki-Bum, Khang, Yoonho

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Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices von Suh, Dong-Seok, Kim, Cheolkyu, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Tae-Yon, Khang, Yoonho, Park, Tae Sang, Yoon, Young-Gui, Im, Jino, Ihm, Jisoon

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Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x von Lee, Tae-Yon, Kim, Ki-Bum, Cheong, Byung-ki, Lee, Taek Sung, Park, Sung Jin, Lee, Kyeong Seok, Kim, Won Mok, Kim, Soon Gwang

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Optical properties of (GeTe, Sb2Te3) pseudobinary thin films studied with spectroscopic ellipsometry von Park, Jun-Woo, Baek, Seoung Ho, Kang, Tae Dong, Lee, Hosun, Kang, Youn-Seon, Lee, Tae-Yon, Suh, Dong-Seok, Kim, Ki Joon, Kim, Cheol Kyu, Khang, Yoon Ho, Da Silva, Juarez L. F., Wei, Su-Huai

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Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices von Lee, Tae-Yon, Kim, Kijoon H. P., Suh, Dong-Seok, Kim, Cheolkyu, Kang, Youn-Seon, Cahill, David G., Lee, Dongbok, Lee, Min-Hyun, Kwon, Min-Ho, Kim, Ki-Bum, Khang, Yoonho

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High Speed Phase Change Random Access Memory with (Ge 1 Sb 2 Te 4 ) 0.9 (Sn 1 Bi 2 Te 4 ) 0.1 Complete Solid Solution von Ahn, Dong-Ho, Lee, Tae-Yon, Lee, Dong-Bok, Yim, Sung-Soo, Wi, Jung-Sub, Jin, Kyung-Bae, Lee, Min-Hyun, Kim, Ki-Bum, Kang, Dae-Hwan, Jeong, Han-ju, Cheong, Byung-ki

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Valence band structures of the phase change material Ge2Sb2Te5 von Lee, Dohyun, Lee, Sang Sun, Kim, Wondong, Hwang, Chanyong, Hossain, M. B., Hung, Ngyuen Le, Kim, Hyojin, Kim, C. G., Lee, Hangil, Hwang, Han Na, Hwang, Chan-Cuk, Lee, Tae-Yon, Kang, Younseon, Kim, Cheolkyu, Suh, Dong-Seok, Kim, Kijoon H. P., Khang, Yoonho

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Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing von Nam, Sung-Wook, Kim, Cheolkyu, Kwon, Min-Ho, Lee, Hyo-Sung, Wi, Jung-Sub, Lee, Dongbok, Lee, Tae-Yon, Khang, Yoonho, Kim, Ki-Bum

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Electron-beam lithography of Co ∕ Pd multilayer with hydrogen silsesquioxane and amorphous Si intermediate layer von Wi, Jung-Sub, Lee, Tae-Yon, Jin, Kyung-Bae, Hong, Dae Hoon, Shin, Kyung Ho, Kim, Ki-Bum

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Optical Properties of Pseudobinary GeTe, Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Sb2Te3 from Ellipsometry and Density Functional Theory von Park, J. W., Eom, S. H., Lee, H., Da Silva, J. L. F., Kang, Y. S., Lee, T. Y., Khang, Y. H.

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Perspectives on 3D ToF sensor SoC integration for user interface application von Tae-Yon Lee, Jung-Kyu Jung, Dong-Ki Min, Yoondong Park, Kwanghyuk Bae, Tae-Chan Kim

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Separate domain formation in Ge2Sb2Te5–SiOx mixed layer von Lee, Tae-Yon, Yim, Sung-Soo, Lee, Dongbok, Lee, Min-Hyun, Ahn, Dong-Ho, Kim, Ki-Bum

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Thermoelectric heating of Ge 2 Sb 2 Te 5 in phase change memory devices von Suh, Dong-Seok, Kim, Cheolkyu, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Tae-Yon, Khang, Yoonho, Park, Tae Sang, Yoon, Young-Gui, Im, Jino, Ihm, Jisoon

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