Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric von Feng Zhu, Se Jong Rhee, Chang Yong Kang, Chang Hwan Choi, Akbar, M.S., Krishnan, S.A., Manhong Zhang, Hyoung-Sub Kim, Tackwhi Lee, Ok, I., Lee, J.C.

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Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y2O3/HfO2 gate dielectric von FENG ZHU, SE JONG RHEE, LEE, Jack C, CHANG YONG KANG, CHANG HWAN CHOI, AKBAR, Mohammad S, KRISHNAN, Siddarth A, MANHONG ZHANG, KIM, Hyoung-Sub, LEE, Tackwhi, OK, Injo

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Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y sub(2)O sub(3)/HfO sub(2) gate dielectric von Zhu, Feng, Jong Rhee, Se, Yong Kang, Chang, Hwan Choi, Chang, Akbar, MS, Krishnan, SA, Zhang, Manhong, Kim, Hyoung-Sub, Lee, Tackwhi, Ok, I, Lee, J C

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Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs von Se Jong Rhee, Hyoung-Sub Kim, Chang Yong Kang, Chang Hwan Choi, Akbar, M.S., Manhong Zhang, Tackwhi Lee, Injo Ok, Feng Zhu, Krishnan, S.A., Jack C. Lee

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