Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides von Kim, Changsik, Moon, Inyong, Lee, Daeyeong, Choi, Min Sup, Ahmed, Faisal, Nam, Seunggeol, Cho, Yeonchoo, Shin, Hyeon-Jin, Park, Seongjun, Yoo, Won Jong

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Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics von Choi, Min Sup, Qu, Deshun, Lee, Daeyeong, Liu, Xiaochi, Watanabe, Kenji, Taniguchi, Takashi, Yoo, Won Jong

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Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide von Li, Hua-Min, Lee, Daeyeong, Qu, Deshun, Liu, Xiaochi, Ryu, Jungjin, Seabaugh, Alan, Yoo, Won Jong

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P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor von Liu, Xiaochi, Qu, Deshun, Ryu, Jungjin, Ahmed, Faisal, Yang, Zheng, Lee, Daeyeong, Yoo, Won Jong

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Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET von Ra, Chang-Ho, Choi, Min Sup, Lee, Daeyeong, Yoo, Won Jong

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Passivated ambipolar black phosphorus transistors von Yue, Dewu, Lee, Daeyeong, Jang, Young Dae, Choi, Min Sup, Nam, Hye Jin, Jung, Duk-Young, Yoo, Won Jong

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Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode von Qu, Deshun, Liu, Xiaochi, Ahmed, Faisal, Lee, Daeyeong, Yoo, Won Jong

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High-performance photocurrent generation from two-dimensional WS2 field-effect transistors von Hwan Lee, Seung, Lee, Daeyeong, Sik Hwang, Wan, Hwang, Euyheon, Jena, Debdeep, Jong Yoo, Won

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P‐Type Polar Transition of Chemically Doped Multilayer MoS 2 Transistor von Liu, Xiaochi, Qu, Deshun, Ryu, Jungjin, Ahmed, Faisal, Yang, Zheng, Lee, Daeyeong, Yoo, Won Jong

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P-Type Polar Transition of Chemically Doped Multilayer MoS sub(2) Transistor von Liu, Xiaochi, Qu, Deshun, Ryu, Jungjin, Ahmed, Faisal, Yang, Zheng, Lee, Daeyeong, Yoo, Won Jong

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Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrodeElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr060... von Qu, Deshun, Liu, Xiaochi, Ahmed, Faisal, Lee, Daeyeong, Yoo, Won Jong

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Self-screened high performance multi-layer MoS sub(2) transistor formed by using a bottom graphene electrode von Qu, Deshun, Liu, Xiaochi, Ahmed, Faisal, Lee, Daeyeong, Yoo, Won Jong

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Lateral MoS 2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics von Choi, Min Sup, Qu, Deshun, Lee, Daeyeong, Liu, Xiaochi, Watanabe, Kenji, Taniguchi, Takashi, Yoo, Won Jong

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Self-screened high performance multi-layer MoS 2 transistor formed by using a bottom graphene electrode von Qu, Deshun, Liu, Xiaochi, Ahmed, Faisal, Lee, Daeyeong, Yoo, Won Jong

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High-performance photocurrent generation from two-dimensional WS{sub 2} field-effect transistors von Hwan Lee, Seung, Lee, Daeyeong, Jong Yoo, Won, Samsung-SKKU Graphene Center, Sik Hwang, Wan, Hwang, Euyheon, Jena, Debdeep

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THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME von CHOI, Jaeho, LEE, Seungmin, LEE, Daeyeong, LEE, Sunyi

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Presumed sclerotomy site bleeding inflowing into the anterior chamber after the removal of a 23-gauge microcannula in 23-gauge sutureless vitrectomy von Nam, Dong Heun, Yoon, Sang Chul, Lee, Dae Yeong, Sohn, Hee Jin

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PROCESSOR PERFORMING DYNAMIC VOLTAGE AND FREQUENCY SCALING, ELECTRONIC DEVICE INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME von LEE, Jiyoung, PARK, Jonglae, LEE, Daeyeong, JOO, Hyunwook, PARK, Choonghoon, PARK, Bumgyu

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METHOD AND DEVICE FOR SCHEDULING TASKS IN MULTI-CORE PROCESSOR von BYEON, Seyeong, JO, Eunok, LEE, Daeyeong, Park, Jonglae, PARK, Bumgyu

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Apparatus and method for dynamic thermal management using frequency clamping and idle injection von Lee, Daeyeong, Choi, Dahye, Park, Bumgyu, Shin, Hanjun, Park, Choonghoon, Han, Donghee, Park, Jong-Lae

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