Local response estimation of a seagoing vessel using onboard measurement data von Lee, Choonghyun, Kim, Yooil

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Advanced CMOS Devices and Applications von Lee, Choonghyun, Zhao, Yi

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High-Pressure Oxidation on Ge: Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties von ChoongHyun Lee

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Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films von Weng, Zeping, Zhao, Liang, Lee, ChoongHyun, Zhao, Yi

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Phase Transitions and Anti-Ferroelectric Behaviors in Hf 1-x Zr x O 2 Films von Weng, Zeping, Zhao, Liang, Lee, ChoongHyun, Zhao, Yi

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Chemically surface-engineered polydimethylsiloxane layer via plasma treatment for advancing textile-based triboelectric nanogenerators von Lee, Choonghyun, Yang, Seungmo, Choi, Dasong, Kim, Woojong, Kim, Jaeho, Hong, Jinpyo

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Highly Surface-Embossed Polydimethylsiloxane-Based Triboelectric Nanogenerators with Hierarchically Nanostructured Conductive Ni–Cu Fabrics von Choi, Dasong, Yang, Seungmo, Lee, Choonghyun, Kim, Woojong, Kim, Jaeho, Hong, Jinpyo

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8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio von Ding, Xiang, Zhang, Huimin, Wang, Xianggao, Zhou, Xiaofeng, Lee, ChoongHyun, Zhao, Yi

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Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Films With Two-Step Oxygen Vacancy Engineering von Su, Mingji, Gao, Shifan, Weng, Zeping, Zhao, Liang, Lee, Choonghyun, Zhao, Yi

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Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge von Ding, Xiang, Lan, Zhangsheng, Zhu, Saike, Gao, Shifan, Su, Mingji, Lee, ChoongHyun, Zhao, Yi

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Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO2 von Li, Jianguo, Su, Mingji, Weng, Zeping, Lan, Zhangsheng, Lee, ChoongHyun, Zhao, Yi

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Forming-Free HfOx-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge von Ding, Xiang, Yu, Xinwei, Zhangsheng Lan, Li, Jianguo, Zhou, Shiqi, Lee, Choonghyun, Zhao, Yi

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Impact of Bottom Electrode Crystallinity on Ferroelectricity of La-Doped HfO 2 von Li, Jianguo, Su, Mingji, Weng, Zeping, Lan, Zhangsheng, Lee, ChoongHyun, Zhao, Yi

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Forming-Free HfO x -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge von Ding, Xiang, Yu, Xinwei, Lan, Zhangsheng, Li, Jianguo, Zhou, Shiqi, Lee, Choonghyun, Zhao, Yi

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A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation von Wang, Xianggao, Qu, Yiming, Yang, Fan, Zhao, Liang, Lee, Choonghyun, Zhao, Yi

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Forming-Free HfO } -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge von Ding, Xiang, Yu, Xinwei, Lan, Zhangsheng, Li, Jianguo, Zhou, Shiqi, Lee, ChoongHyun, Zhao, Yi

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Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing von Chen, Zhengyang, Lan, Zhangsheng, Lin, Yiran, Nishimura, Tomonori, Lee, Choonghyun, Zhao, Yi

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A Review of Mechanism and Technology of Hybrid Bonding von Xu, Yipeng, Zeng, Yanping, Zhao, Yi, Lee, Choonghyun, He, Minhui, Liu, Zongfang

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Improvement of Ferroelectricity and Reliability in Hf 0.5 Zr 0.5 O 2 Thin Films With Two-Step Oxygen Vacancy Engineering von Su, Mingji, Gao, Shifan, Weng, Zeping, Zhao, Liang, Lee, Choonghyun, Zhao, Yi

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Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx von He, Huikai, Tan, Yixin, Lee, Choonghyun, Zhao, Yi

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