On-wafer wideband characterization: a powerful tool for improving the IC technologies von Lederer, Dimitri, Raskin, Jean-Pierre

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Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz von Nyssens, L., Ma, S., Rack, M., Lederer, D., Raskin, J.-P.

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Mismatched Luneburg Lenses: Numerical Analysis and Design Rules von Kaschten, Vincent, Tihon, Denis, Lederer, Dimitri, Craeye, Christophe

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Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations von Yan, Ran, Lynch, Danny, Cayron, Thibault, Lederer, Dimitri, Afzalian, Aryan, Lee, Chi-Woo, Dehdashti, Nima, Colinge, J.P.

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Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers von Lederer, Dimitri, Raskin, Jean-Pierre

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Impact of High Temperature Up to 175 ^ C on the DC and RF Performances of 22-nm FD-SOI MOSFETs von Halder, Arka, Nyssens, Lucas, Vanbrabant, Martin, Rack, Martin, Lederer, Dimitri, Kilchytska, Valeriya, Raskin, Jean-Pierre

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Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs von Halder, Arka, Nyssens, Lucas, Lederer, Dimitri, Kilchytska, Valeriya, Raskin, Jean-Pierre

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Frequency Variation of the Small-Signal Output Conductance of Decananometer MOSFETs Due to Substrate Crosstalk von Kilchytska, V., Pailloncy, G., Lederer, D., Raskin, J.-P., Collaert, N., Jurczak, M., Flandre, D.

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A Novel High-Performance CMOS VCRO Based on Electrically Doped Nanowire FETs in 10 nm Node von Ziabari, Seyed Ali Sedigh, Aziz, Syed Mahfuzul, Lederer, Dimitri

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Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs von Lee, Chi-Woo, Lederer, Dimitri, Afzalian, Aryan, Yan, Ran, Dehdashti, Nima, Xiong, Weize, Colinge, Jean-Pierre

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Properties of Accumulation-Mode Multi-Gate Field-Effect Transistors von Colinge, Jean-Pierre, Lederer, Dimitri, Afzalian, Aryan, Yan, Ran, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Xiong, Weize

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Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs von Halder, Arka, Nyssens, Lucas, Rack, Martin, Lederer, Dimitri, Raskin, Jean-Pierre, Kilchytska, Valeriya

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Time Dependence of RF Losses in GaN-on-Si Substrates von Cardinael, Pieter, Yadav, Sachin, Zhao, Ming, Rack, Martin, Lederer, Dimitri, Collaert, Nadine, Parvais, Bertrand, Raskin, Jean-Pierre

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Impact of substrate resistivity on spiral inductors at mm-wave frequencies von Nyssens, Lucas, Rack, Martin, Schwan, Christoph, Zhao, Zhixing, Lehmann, Steffen, Hermann, Tom, Allibert, Frederic, Aulnette, Cécile, Lederer, Dimitri, Raskin, Jean-Pierre

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High frequency degradation of body-contacted PD SOI MOSFET output conductance von Lederer, Dimitri, Flandre, Denis, Raskin, Jean-Pierre

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RF Performance of a Commercial SOI Technology Transferred Onto a Passivated HR Silicon Substrate von Lederer, D., Raskin, J.-P.

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Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization von Raskin, J.-P., Tsung Ming Chung, Kilchytska, V., Lederer, D., Flandre, D.

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Foreword von Lederer, Dimitri, Colinge, Jean-Pierre

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High-Frequency Noise Performance of 60-nm Gate-Length FinFETs von Raskin, J.-P., Pailloncy, G., Lederer, D., Danneville, F., Dambrine, G., Decoutere, S., Mercha, A., Parvais, B.

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Characterization of the Body Node in PD SOI MOSFETs Using Multiport VNA Measurements von Lederer, D., Raskin, J.-P.

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