Structural and electronic properties of graphite layers grown on SiC(0 0 0 1) von Seyller, Th, Emtsev, K.V., Gao, K., Speck, F., Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Rader, O., Varykhalov, A., Shikin, A.M.

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Electronic properties of clean unreconstructed 6H–SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy von Emtsev, K.V., Seyller, Th, Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Preuss, M.

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Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy von Seyller, Thomas, Stojanov, P., Leckey, R.C.G., Riley, J.D., Emtsev, Konstantin V., Speck, Florian, Ley, Lothar

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MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates von Feng, P X, Riley, J D, Leckey, R C G, Ley, L

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An effect of phonon on electron mean-free-path in ionic crystals von Feng, P.X., Leckey, R.C.G.

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Surface, interface and bulk properties of GaAs(111)B treated by Se layers von Feng, P X, Riley, J D, Leckey, R C G, Pigram, P J, Seyller, T, Ley, L

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Correlation effects at ideal SiC { 0001 } − ( 1 × 1 ) surfaces von Emtsev, K. V., Seyller, Th, Ley, L., Broekman, L., Tadich, A., Riley, J. D., Leckey, R. G. C., Preuss, M.

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Apparent “three-dimensional” Fermi surface of transition-metal monolayers von Rader, O., Wolf, H., Gudat, W., Tadich, A., Broekman, L., Huwald, E., Leckey, R. C. G., Riley, J. D., Shikin, A. M., Matsui, F., Miyata, H., Daimon, H.

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Solid‐state bandpass detector for inverse photoemission spectroscopy von Sheils, W., Leckey, R. C. G., Riley, J. D.

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The use of symmetry for absolute E( K) determinations from IPS measurements of face-centred cubic crystals von Sheils, W, Riley, J.D, Leckey, R.C.G

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Electronic states of an ordered oxide on C-terminated 6H–SiC von Hollering, M., Maier, F., Sieber, N., Stammler, M., Ristein, J., Ley, L., Stampfl, A.P.J., Riley, J.D., Leckey, R.C.G., Leisenberger, F.P., Netzer, F.P.

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Publisher's Note: Correlation effects at ideal SiC { 0001 } − ( 1 × 1 ) surfaces [Phys. Rev. B 73 , 075412 (2006)] von Emtsev, K. V., Seyller, Th, Ley, L., Broekman, L., Tadich, A., Riley, J. D., Leckey, R. G. C., Preuss, M.

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Semiconductor band structure as determined from angle resolved photoelectron spectroscopy von Leckey, R. C. G., Riley, J. D.

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Fermi Surface of Disordered Cu3Au as Determined by Angle-resolved Photoemission von Con Foo, J. A., Tkatchenko, S., Stampfl, A. P. J., Ziegler, A., Mattern, B., Hollering, M., Denecke, R., Ley, L., Riley, J. D., Leckey, R. C. G.

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Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100) von Tadich, A., Broekman, L., Huwald, E., Seyller, Thomas, Leckey, R.C.G., Riley, J.D., Emtsev, Konstantin V., Ley, Lothar

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Al 2 O 3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001) von Gao, K. Y., Seyller, Th, Ley, L., Ciobanu, F., Pensl, G., Tadich, A., Riley, J. D., Leckey, R. G. C.

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The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC von Tadich, A., Seyller, Thomas, James, D., Leckey, R.C.G., Riley, J.D., Emtsev, Konstantin V., Sieber, N., Ley, Lothar, Graupner, R., Polcik, M.

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Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition von Tadich, A., Seyller, Thomas, Leckey, R.C.G., Riley, J.D., Ciobanu, Florin, Gao, Kun Yuan, Ley, Lothar, Pensl, Gerhard

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Photoemission Studies of Surface, Interface and Bulk Properties of GaAs (001) Treated by Mg von Feng, P X, Riley, J D, Leckey, R C G

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Surface and bulk properties of GaAs(001) treated by selenium layers von Feng, P.X., Riley, J.D., Leckey, R.C.G., Pigram, P.J., Hollering, M., Ley, L.

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