Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell von Haddad, N F, Kelly, A T, Lawrence, R K, Bin Li, Rodgers, J C, Ross, J F, Warren, K M, Weller, R A, Mendenhall, M H, Reed, R A

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Physical Evidence Supporting the Electrical Signature of SEGR on Thin Vertical Oxides von Lawrence, Reed K, Zimmerman, Jeffrey A, Ross, Jason F

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Single Event Effect Induced Multiple-Cell Upsets in a Commercial 90 nm CMOS Digital Technology von Lawrence, R.K., Kelly, A.T.

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Electrical Test Conditioning Influence on Total Ionizing Dose Response of SRAMs von Lawrence, R. K.

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Radiation Characterization of 512Mb SDRAMs von Lawrence, R.K.

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Single Event Gate Rupture Testing on 22A Gate Oxide Structures from a 90nm Commercial CMOS Process von Lawrence, R.K.

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Second generation (200MHz) RAD750 microprocessor radiation evaluation von Haddad, N. F., Brown, R. D., Ferguson, R., Kelly, A. T., Lawrence, R. K., Pirkl, D. M., Rodgers, J. C.

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Soft Error Sensitivities in 90 nm Bulk CMOS SRAMs von Lawrence, R.K., Ross, J.F., Haddad, N.F., Reed, R.A., Albrecht, D.R.

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The Path and Challenges to 90-nm Radiation-Hardened Technology von Haddad, N.F., Chan, E., Doyle, S., Kelly, A.T., Lawrence, R.K., Lawson, D., Patel, D., Ross, J.

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Single Event Gate Rupture Testing on 90 nm Bulk CMOS Deep Trench Oxide Capacitors von Lawrence, R.K., Zimmerman, J.A., Ross, J.F.

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90-nm Digital Single Event Transient Pulsewidth Measurements von Lawrence, R K, Ross, J F, Wood, N E

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Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption von McMorrow, D., Lotshaw, W.T., Melinger, J.S., Buchner, S., Davis, J.D., Lawrence, R.K., Bowman, J.H., Brown, R.D., Carlton, D., Pena, J., Vasquez, J., Haddad, N., Warren, K., Massengill, L.

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Electron traps on high-temperature oxidized SIMOX buried oxides von Lawrence, R.K., Ioannou, D.E.

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Single-event upset immune static random access memory cell circuit von LAWRENCE REED K, HADDAD NADIM F

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Single-event upset immune static random access memory cell circuit von Lawrence, Reed K, Haddad, Nadim F

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Single-Event Upset Immune Static Random Access Memory Cell Circuit, System, And Method von LAWRENCE REED K, HADDAD NADIM F

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Single-event upset immune static random access memory cell circuit, system, and method von LAWRENCE REED K, HADDAD NADIM F

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Single-event upset immune static random access memory cell circuit, system, and method von Lawrence, Reed K, Haddad, Nadim F

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SINGLE-EVENT UPSET IMMUNE STATIC RANDOM ACCESS MEMORY CELL CIRCUIT, SYSTEM, AND METHOD von LAWRENCE REED K, HADDAD NADIM F

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Physical evidence for the electrical signature of SEGR on thin vertical oxides von Lawrence, R. K., Zimmerman, J. A., Ross, J. F.

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