Understanding the Superlinear Onset of Tunnel-FET Output Characteristic von De Michielis, L., Lattanzio, L., Ionescu, A. M.

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Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation von Lattanzio, L., De Michielis, L., Ionescu, A. M.

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Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET von Alper, Cem, Lattanzio, Livio, De Michielis, Luca, Palestri, Pierpaolo, Selmi, Luca, Ionescu, Adrian Mihai

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On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET von Lattanzio, L., Dagtekin, N., De Michielis, L., Ionescu, A. M.

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The electron–hole bilayer tunnel FET von Lattanzio, Livio, De Michielis, Luca, Ionescu, Adrian M.

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Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior? von De Michielis, L., Lattanzio, L., Moselund, K. E., Riel, H., Ionescu, A. M.

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An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI von Salvatore, G.A., Lattanzio, L., Bouvet, D., Ionescu, A.M.

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A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms von Lattanzio, Livio, Biswas, Arnab, De Michielis, Luca, Ionescu, Adrian M.

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The Hysteretic Ferroelectric Tunnel FET von Ionescu, A M, Lattanzio, L, Salvatore, G A, De Michielis, L, Boucart, K, Bouvet, D

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Ferroelectric transistors with improved characteristics at high temperature von Salvatore, Giovanni A., Lattanzio, Livio, Bouvet, Didier, Stolichnov, Igor, Setter, Nava, Ionescu, Adrian M.

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A tunneling field-effect transistor exploiting internally combinedband-to-band and barrier tunneling mechanisms von Lattanzio, Livio, Biswas, Arnab, De Michielis, Luca, Ionescu, Adrian M.

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Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory von Salvatore, G. A., Lattanzio, L., Bouvet, D., Ionescu, A. M.

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FinFET for high sensitivity ion and biological sensing applications von Rigante, Sara, Lattanzio, Livio, Ionescu, Adrian M.

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The electron―hole bilayer tunnel FET: Selected Papers from the ESSDERC 2011 Conference von LATTANZIO, Livio, DE MICHIELIS, Luca, IONESCU, Adrian M

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Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current von Lattanzio, L., De Michielis, L., Ionescu, A. M.

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Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms von Lattanzio, Livio, Biswas, Arnab, De Michielis, Luca, Ionescu, Adrian M.

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(Invited) Beyond CMOS Devices as Enablers of Future Energy Efficient Integrated Circuits and Systems von Ionescu, Adrian M., Salvatore, Giovanni A., Lattanzio, Livio

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Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature von Lattanzio, Livio, Salvatore, Giovanni Antonio, Ionescu, Adrian Mihai

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Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance von Alper, C., De Michielis, L., Dagtekin, N., Lattanzio, L., Ionescu, A. M.

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Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms von Lattanzio, L, De Michielis, L, Biswas, A, Ionescu, A M

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