Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC von Ochalski, Tomasz J., Grzegorczyk, Andrzej, Rudzinski, Mariusz, Larsen, Poul K., Holtz, Per Olof, Bergman, Peder, Paskov, Plamen P.

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Optical study of AlGaN/GaN based HEMT structures von Ochalski, Tomasz J., Grzegorczyk, Andrzej, Rudzinski, Mariusz, Larsen, Poul K., Kowalczyk, Emil, Holtz, Per Olof, Bergman, Peder, Paskov, Plamen P.

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Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates von Pernot, J., Bustarret, E., Rudziński, M., Hageman, P. R., Larsen, P. K.

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The Influence of In x Ga 1– x As and GaAs 1– y P y Layers Surrounding the AlAs Release Layer in the Epitaxial Lift-Off Process von van Niftrik, Antonius T. J., Schermer, John J., Bauhuis, Gerhardus J., van Deelen, Joop, Mulder, Peter, Larsen, Poul K.

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TfI14: Ferroelectric thin films for memory applications: Sol-gel processing and decomposition of organo-metallic compounds von Klee, Mareike, Larsen, Poul K.

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The Influence of InxGa1-xAs and GaAs1-yPy Layers Surrounding the AlAs Release Layer in the Epitaxial Lift-Off Process von VAN NIFTRIK, Antonius T. J, SCHERMER, John J, BAUHUIS, Gerhardus J, VAN DEELEN, Joop, MULDER, Peter, LARSEN, Poul K

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11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs von Krämer, Mark, Karouta, Fouad, Kwaspen, J J., Rudzinski, Marius, Larsen, Poul K., Suiker, Erwin M., De Hek, Peter A., Rödle, Thomas, Volokhine, Iouri, Kaufmann, Leon M.

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The Influence of In x Ga1–x As and GaAs1–y P y Layers Surrounding the AlAs Release Layer in the Epitaxial Lift-Off Process von van Niftrik, Antonius T. J, Schermer, John J, Bauhuis, Gerhardus J, van Deelen, Joop, Mulder, Peter, Larsen, Poul K

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Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates von Pernot, Julien, Bustarret, Etienne, Rudzinski, Mariusz, Hageman, Paul R, Larsen, Poul K

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11.9 W Output Power at 4 GHz from 1 mm AlGaN/GaN HEMT von Krämer, Mark, Karouta, Fouad, Kwaspen, J J., Rudzinski, Marius, Larsen, Poul K., Suiker, Erwin M., De Hek, Peter A., Rödle, Thomas, Volokhine, Iouri, Kaufmann, Leon M.

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Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates von Pernot, Julien, Bustarret, Etienne, Rudzinski, Mariusz, Hageman, Paul R, Larsen, Poul K

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Method of manufacturing a semiconductor device having a capacitor with a ferroelectric, dielectric von WOLTERS, ROBERTUS A. M, LARSEN, POUL K, ULENAERS, MATHIEU J. E

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Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor von WOLTERS, ROBERTUS A. M, LARSEN, POUL K, ULENAERS, MATHIEU J. E

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Ferroelectric Thin Films III, Symposium Held in San Francisco, California on April 13 - 16, 1993. Materials Research Society Symposium Proceedings, Volume 310 von Myers, Edward R, Tuttle, Bruce A, Desu, Seshu B, Larsen, Poul K

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Sick building syndrome: association of symptoms with serum IgE specific to fungi von Meyer, H W, Larsen, F O, Jacobi, H H, Poulsen, L K, Clementsen, P, Gravesen, S, Gyntelberg, F, Norn, S

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Method of post-etching a mechanically treated substrate von VAN DER PUTTEN, JAN B. P. H, IN 'T VELD, FREDERIK H, SPIERINGS, GIJSBERTUS A. C. M, POSTMA, LAMBERTUS, BUSIO, JOHANNES M. M, LARSEN, POUL K

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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING A CAPACITOR WITH A FERROELECTRIC DIELECTRIC, AND SEMICONDUCTOR DEVICE COMPRISING SUCH A CAPACITOR von LARSEN, POUL K, WOLTERS, ROBERTUS A. M, ULENAERS, MATHIEU J. E

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DEVICE FOR INTERRUPTING A MATERIAL FLOW von VAN DER LEEK, JOHANNES J, KAMERBEEK, EVERT M. H, VAN STIPHOUT, NICOLAAS H. J. M, VAN DER BORST, ALBERTUS J. C, LARSEN, POUL K, MEERMAN, WILHELMUS C. P. M

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Method of manufacturing a semiconductor device by means of a molecular beam technique von SARIS, FRANS W, VAN DER VEEN, JOHANNES F, HAISMA, JAN, DOUMA, WILLEM A. S, DE JONG, TIM, LARSEN, POUL K

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Modular wall panel and assembly for timber building construction von LARSEN, POUL ERIK, OESTBIRK, DK

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