Vertical nanowire array-based field effect transistors for ultimate scaling von Larrieu, G, Han, X-L

Volltext

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning von Plissard, S, Larrieu, G, Wallart, X, Caroff, P

Volltext

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing von Chery, N., Zhang, M., Monflier, R., Mallet, N., Seine, G., Paillard, V., Poumirol, J. M., Larrieu, G., Royet, A. S., Kerdilès, S., Acosta-Alba, P., Perego, M., Bonafos, C., Cristiano, F.

Volltext

Engineering of dense arrays of Vertical Si1-x Ge x nanostructures von Müller, J, Lecestre, A, Demoulin, R, Cristiano, F, Hartmann, J-M, Larrieu, G

Volltext

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays von Clement, N, Han, X L, Larrieu, G

Volltext

Nanoscale Thermal Transport in Vertical Gate- All-Around Junctionless Nanowire Transistors- Part II: Multiphysics Simulation von Rezgui, H., Mukherjee, C., Wang, Y., Deng, M., Kumar, A., Muller, J., Larrieu, G., Maneux, C.

Volltext

Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors-Part I: Experimental Methods von Mukherjee, C., Rezgui, H., Wang, Y., Deng, M., Kumar, A., Muller, J., Larrieu, G., Maneux, C.

Volltext

CMOS Inverter Based on Schottky Source-Drain MOS Technology With Low-Temperature Dopant Segregation von Larrieu, G, Dubois, E

Volltext

Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors von Dubois, Emmanuel, Larrieu, Guilhem

Volltext

Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach von Guerfi, Y, Doucet, J B, Larrieu, G

Volltext

High resolution HSQ nanopillar arrays with low energy electron beam lithography von Guerfi, Y., Carcenac, F., Larrieu, G.

Volltext

Nanowire based bioprobes for electrical monitoring of electrogenic cells von Casanova, A, Bettamin, L, Blatche, M-C, Mathieu, F, Martin, H, Gonzalez-Dunia, D, Nicu, L, Larrieu, G

Volltext

Understanding of the retarded oxidation effects in silicon nanostructures von Krzeminski, C. D., Han, X.-L., Larrieu, G.

Volltext

Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI von Larrieu, G., Yarekha, D.A., Dubois, E., Breil, N., Faynot, O.

Volltext

Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities von Larrieu, G., Dubois, E., Wallart, X., Baie, X., Katcki, J.

Volltext

Automated analysis of lateral river connectivity and fish stranding risks—Part 1: Review, theory and algorithm von Larrieu, Kenneth G., Pasternack, Gregory B., Schwindt, Sebastian

Volltext

Automated analysis of lateral river connectivity and fish stranding risks. Part 2: Juvenile Chinook salmon stranding at a river rehabilitation site von Larrieu, Kenneth G., Pasternack, Gregory B.

Volltext

Correction to Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires von Dubrovskii, V. G, Xu, T, Álvarez, A. Díaz, Larrieu, G, Plissard, S. R, Caroff, P, Glas, F, Grandidier, B

Volltext

Schottky-barrier source/drain MOSFETs on ultrathin SOI body with a tungsten metallic midgap gate von Larrieu, G., Dubois, E.

Volltext

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate von Larrieu, G., Dubois, E.

Volltext