On hillocks generated during anisotropic etching of Si in TMAH von Landsberger, L.M., Naseh, S., Kahrizi, M., Paranjape, M.

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High-temperature gas sensor using perovskite thin films on a suspended microheater von Grudin, O., Marinescu, R., Landsberger, L. M., Kahrizi, M., Frolov, G., Cheeke, J. D. N., Chehab, S., Post, M., Tunney, J., Du, X., Yang, D., Segall, D.

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Experimental characterization of the Si/Al/tetramethylammonium hydroxide system von TASHTOUSH, A, LANDSBERGER, L. M, ESSALIK, A, KAHRIZI, M, PARANJAPE, M, CURRIE, J. F, PANDY, A

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Electrical characterization of metal–oxide–semiconductor capacitors with anodic and plasma-nitrided oxides von Landsberger, L. M., Ghayour, R., Sayedi, M., Kahrizi, M., Landheer, D., Bardwell, J. A., Riopel, Y., Jean, C., Logiudice, V.

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Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on Si von LANDSBERGER, L. M, TILLER, W. A

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Electrical characterization of oxynitrided gate dielectrics under constant-current Fowler-Nordheim stress von NGUYEN, T. K, LANDSBERGER, L. M, BELKOUCH, S, JEAN, C

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Mechanisms of film growth rate enhancement in anodic and cathodic corona-discharge oxiation [oxidation] processes von SAYEDI, S. M, LANDHEER, D, LANDSBERGER, L. M, KAHRIZI, M

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Bistable microelectrothermal actuator in a standard complementary metal-oxide-semiconductor process von Ressejac, I. C., Landsberger, L. M., Currie, J. F.

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Electrical characterization of thin SiO2 films on silicon created by anodic oxygen corona discharge processing von SAYEDI, S. M, LANDSBERGER, L. M, KAHRIZI, M, BELKOUCH, S, LANDHEER, D

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Interface states distribution in electrical stressed oxynitrided gate-oxide von BELKOUCH, S, NGUYEN, T. K, LANDSBERGER, L. M, AKTIK, C, JEAN, C, KAHRIZI, M

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Mask-under-etch characterization of Si{110} in TMAH von Pandy, A, Landsberger, L M, Kahrizi, M

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Micromachining and operation of a bistable electrothermal actuator von Landsberger, L M, Ressejac, I C, Currie, J F, Isnard, L

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A two-dimensional micromachined accelerometer von Ahmad, H., Al-Khalili, A.J., Landsberger, L.M., Kahrizi, M.

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Stress relaxation technique for thermally grown SiO2 von LANDSBERGER, L. M, TILLER, W. A

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Stress relaxation in SiO2 films on silicon by a negative point oxygen corona discharge von LANDSBERGER, L. M, TILLER, W. A

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Anomalies in modeling of anisotropic etching of silicon: Facet boundary effects von Elalamy, Z., Landsberger, L. M., Pandy, A., Kahrizi, M., Stateikina, I., Michel, S.

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Analysis of step-based silicon surfaces at facet boundaries during wet anisotropic etching von Stateikina, I., Elalamy, M.-Z., Landsberger, L. M., Kahrizi, M.

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Nonlinear viscoelastic dilation of SiO2 films von RAFFERTY, C. S, LANDSBERGER, L. M, DUTTON, R. W, TILLER, W. A

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A CMOS-compatible 2-D vertical Hall magnetic-field sensor using active carrier confinement and post-process micromachining von Paranjape, M, Landsberger, L.M, Kahrizi, Mojtaba

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Effects of fluorine implants on induced charge components in gate-oxides under constant-current Fowler-Nordheim stress von Tan Khai Nguyen, Landsberger, L.M., Jean, C., Logiudice, V.

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