Temperature-dependent hole transport in GaN von Lancefield, D, Eshghi, H

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Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes von Tinjod, F., de Mierry, P., Lancefield, D., Bougrioua, Z., Laügt, S., Tottereau, O., Lorenzini, P., Chenot, S., Virey, E., Kokta, M.R., Stone-Sundberg, J.L., Pauwels, D.

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Airy function analysis of Franz–Keldysh oscillations in the photoreflectance spectra of In1−xGaxAsyP1−y layers von Hall, D. J., Hosea, T. J. C., Lancefield, D.

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Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy von di Forte-Poisson, M.A, Huet, F, Romann, A, Tordjman, M, Lancefield, D, Pereira, E, Di Persio, J, Pecz, B

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Electron Transport in MOVPE GaN Grown on Silicon Nitride Treated Sapphire von Eshghi, H., Lancefield, D., Beaumont, B., Gibart, P.

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Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs von Lancefield, D, Crawford, A, Beaumont, B, Gibart, P, Heuken, M, Di Forte-Poisson, M

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The Temperature and Pressure Dependence of Electron Transport in Plastically Relaxed InxGa1-xAs von Kasap, M., Lancefield, D.

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Monitoring thickness changes in GaAs/AlAs partial VCSEL Bragg reflector stacks using optical spectroscopic, x-ray and electron microscopic methods von Thomas, P J S, Hosea, T J C, Lancefield, D, Meidia, H

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Quantum-Well and Cavity-Mode Resonance Effects in a Vertical-Cavity Surface-Emitting Laser Structure, Observed by Photoreflectance Using Hydrostatic Pressure and Temperature Tuning von Vicente, P. M. A., Thomas, P. J. S., Lancefield, D., Sale, T. E., Hosea, T. J. C., Adams, A. R., Klar, P. J., Raymond, A.

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Broadcasting and Sport von HOEHN, TOM, LANCEFIELD, DAVID

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The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence von Lancefield, D., Adams, A.R., Meney, A.T., Knap, W., Litwin-Staszewska, E., Skierbiszewski, C., Robert, J.L.

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Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry von Pickering, C., Garawal, N.S., Lancefield, D., Piel, J.P., Blunt, R.

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Reassessment of ionized impurity scattering and compensation in GaAs and InP including correlation scattering von LANCEFIELD, D, ADAMS, A. R, FISHER, M. A

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Growth and characterization of relaxed epilayers of InGaAs on GaAs von Dunstan, D.J., Dixon, R.H., Kidd, P., Howard, L.K., Wilkinson, V.A., Lambkin, J.D., Jeynes, C., Halsall, M.P., Lancefield, D., Emeny, M.T., Goodhew, P.J., Homewood, K.P., Sealy, B.J., Adams, A.R.

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Ageing studies on red-emitting VCSELs for polymer optical fibre applications von Sale, T.E., Lancefield, D., Corbett, B., Justice, J.

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Pressure dependence of light-hole transport in strained InGaAs/GaAs von Lancefield, D., Batty, W., Crookes, C.G., O'Reilly, E.P., Adams, A.R., Homewood, K.P., Sundaram, G., Nicholas, R.J., Emeny, M., Whitehouse, C.R.

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High-purity InP and the role of hydrogen von Glew, R W, Adams, A R, Crookes, C G, Greene, P D, Holmes, S N, Kitching, S A, Klipstein, P C, Lancefield, D, Stradling, R A, Woolley, R A

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The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)As von Foster, T.J., Leadbeater, M.L., Maude, D.K., Alves, E.S., Eaves, L., Henini, M., Hughes, O.H., Celeste, A., Portal, J.C., Lancefield, D., Adams, A.R.

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Investigation of ionized impurity scattering in GaAs and InP using hydrostatic pressure von LANCEFIELD, D, ADAMS, A. R, GUNNEY, B. J

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Random and correlated scattering from ionized impurities in gallium arsenide von Adams, A.R., Fisher, M.A., Lancefield, D., Gunney, B.J.

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