A new method for determining the reverse transit time in bipolar transistors von Kim, Y.-S., Burnett, D., Lage, C.S.

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Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's von Hayden, J.D., Burnett, J.D., Perera, A.K., Mele, T.C., Walczyk, F.W., Kaushik, V., Lage, C.S., See, Y.-C.

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Understanding the effects of charge diffusion in next-generation soft X-ray imagers von Miller, Eric D, Prigozhin, Gregory Y, LaMarr, Beverly J, Bautz, Marshall W, Foster, Richard F, Grant, Catherine E, Lage, Craig S, Leitz, Christopher, Malonis, Andrew

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Transition probabilities in Pr(II) and the solar praseodymium abundance von Lage, Craig S., Whaling, Ward

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Understanding the effects of charge diffusion in next-generation soft X-ray imagers von Miller, Eric D, Prigozhin, Gregory Y, LaMarr, Beverly J, Bautz, Marshall W, Foster, Richard F, Grant, Catherine E, Lage, Craig S, Leitz, Christopher, Malonis, Andrew

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The LSST DESC DC2 Simulated Sky Survey von LSST Dark Energy Science Collaboration, Abolfathi, Bela, Alonso, David, Armstrong, Robert, Aubourg, Éric, Awan, Humna, Babuji, Yadu N, Bauer, Franz Erik, Bean, Rachel, Beckett, George, Biswas, Rahul, Bogart, Joanne R, Boutigny, Dominique, Chard, Kyle, Chiang, James, Claver, Chuck F, Cohen-Tanugi, Johann, Combet, Céline, Connolly, Andrew J, Daniel, Scott F, Digel, Seth W, Drlica-Wagner, Alex, Dubois, Richard, Gangler, Emmanuel, Gawiser, Eric, Glanzman, Thomas, Gris, Phillipe, Habib, Salman, Hearin, Andrew P, Heitmann, Katrin, Hernandez, Fabio, Hložek, Renée, Hollowed, Joseph, Ishak, Mustapha, Ivezić, Željko, Jarvis, Mike, Jha, Saurabh W, Kahn, Steven M, J Bryce Kalmbach, Kelly, Heather M, Kovacs, Eve, Korytov, Danila, K Simon Krughoff, Lage, Craig S, Lanusse, François, Larsen, Patricia, Laurent Le Guillou, Li, Nan, Emily Phillips Longley, Lupton, Robert H, Mandelbaum, Rachel, Yao-Yuan, Mao, Marshall, Phil, Meyers, Joshua E, Moniez, Marc, Morrison, Christopher B, Nomerotski, Andrei, O'Connor, Paul, Park, HyeYun, Park, Ji Won, Peloton, Julien, Perrefort, Daniel, Perry, James, Plaszczynski, Stéphane, Pope, Adrian, Rasmussen, Andrew, Reil, Kevin, Roodman, Aaron J, Rykoff, Eli S, Sánchez, F Javier, Schmidt, Samuel J, Scolnic, Daniel, Stubbs, Christopher W, Tyson, J Anthony, Uram, Thomas D, Villarreal, Antonia, Walter, Christopher W, Wiesner, Matthew P, Wood-Vasey, W Michael, Zuntz, Joe

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DESC DC2 Data Release Note von LSST Dark Energy Science Collaboration, Abolfathi, Bela, Armstrong, Robert, Awan, Humna, Babuji, Yadu N, Bauer, Franz Erik, Beckett, George, Biswas, Rahul, Bogart, Joanne R, Boutigny, Dominique, Chard, Kyle, Chiang, James, Cohen-Tanugi, Johann, Connolly, Andrew J, Daniel, Scott F, Digel, Seth W, Drlica-Wagner, Alex, Dubois, Richard, Gawiser, Eric, Glanzman, Thomas, Habib, Salman, Hearin, Andrew P, Heitmann, Katrin, Hernandez, Fabio, Hložek, Renée, Hollowed, Joseph, Jarvis, Mike, Jha, Saurabh W, Kalmbach, J. Bryce, Kelly, Heather M, Kovacs, Eve, Korytov, Danila, Krughoff, K. Simon, Lage, Craig S, Lanusse, François, Larsen, Patricia, Li, Nan, Longley, Emily Phillips, Lupton, Robert H, Mandelbaum, Rachel, Mao, Yao-Yuan, Marshall, Phil, Meyers, Joshua E, Park, Ji Won, Peloton, Julien, Perrefort, Daniel, Perry, James, Plaszczynski, Stéphane, Pope, Adrian, Rykoff, Eli S, Sánchez, F. Javier, Schmidt, Samuel J, Uram, Thomas D, Villarreal, Antonia, Walter, Christopher W, Wiesner, Matthew P, Wood-Vasey, W. Michael

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DESC DC2 Data Release Note von LSST Dark Energy Science Collaboration, Abolfathi, Bela, Armstrong, Robert, Awan, Humna, Babuji, Yadu N, Bauer, Franz Erik, Beckett, George, Biswas, Rahul, Bogart, Joanne R, Boutigny, Dominique, Chard, Kyle, Chiang, James, Cohen-Tanugi, Johann, Connolly, Andrew J, Daniel, Scott F, Digel, Seth W, Drlica-Wagner, Alex, Dubois, Richard, Gawiser, Eric, Glanzman, Thomas, Habib, Salman, Hearin, Andrew P, Heitmann, Katrin, Hernandez, Fabio, Hložek, Renée, Hollowed, Joseph, Jarvis, Mike, Jha, Saurabh W, J Bryce Kalmbach, Kelly, Heather M, Kovacs, Eve, Korytov, Danila, K Simon Krughoff, Lage, Craig S, Lanusse, François, Larsen, Patricia, Li, Nan, Emily Phillips Longley, Lupton, Robert H, Mandelbaum, Rachel, Yao-Yuan, Mao, Marshall, Phil, Meyers, Joshua E, Park, Ji Won, Peloton, Julien, Perrefort, Daniel, Perry, James, Plaszczynski, Stéphane, Pope, Adrian, Rykoff, Eli S, Sánchez, F Javier, Schmidt, Samuel J, Uram, Thomas D, Villarreal, Antonia, Walter, Christopher W, Wiesner, Matthew P, Wood-Vasey, W Michael

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Memory cell and method for making the same, and memory device von LAGE, CRAIG S

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Magnetic random access memory having a vertical write line von LAGE CRAIG S

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MAGNETIC RANDOM ACCESS MEMORY HAVING A VERTICAL WRITE LINE von LAGE, CRAIG, S

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MAGNETIC RANDOM ACCESS MEMORY HAVING A VERTICAL WRITE LINE von LAGE CRAIG S

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MAGNETIC RANDOM ACCESS MEMORY HAVING A VERTICAL WRITE LINE von CRAIG, S. LAGE

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MAGNETIC RANDOM ACCESS MEMORY HAVING A VERTICAL WRITE LINE von LAGE, CRAIG, S

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SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME von TIAN HONG, MICHAEL P WOO, WANG XIAODONG, CRAIG S LAGE

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Magnetic random access memory having a vertical write line von Lage, Craig S

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Magnetic random access memory having a vertical write line von LAGE CRAIG S

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Semiconductor device including a memory cell and peripheral portion and method for forming same von LAGE, CRAIG S

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A high-performance 0.5- mu m BiCMOS technology for fast 4-Mb SRAMs von Hayden, J.D., Mele, T.C., Perera, A.H., Burnett, D., Walczyk, F.W., Lage, C.S., Baker, F.K., Woo, M., Paulson, W., Lien, M., See, Y.-C., Denning, D., Cosentino, S.J.

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Static-random-access memory cell von LAGE, CRAIG S

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