The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer von Mohamad, Ranim, Chauvat, Marie Pierre, Kret, Slawomir, Gamarra, Piero, Delage, Sylvain, Hounkpati, Viwanou, Lacam, Cedric, Chen, Jun, Ruterana, Pierre

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Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors von Pitaval, Charles, Lacam, Cédric, Defrance, Nicolas, Gaquière, Christophe, Michel, Nicolas, Parillaud, Olivier, Delage, Sylvain L.

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Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs von Malmros, Anna, Gamarra, Piero, Di Forte-Poisson, Marie-Antoinette, Hjelmgren, Hans, Lacam, Cedric, Thorsell, Mattias, Tordjman, Maurice, Aubry, Raphael, Rorsman, Niklas

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InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  °C by MOVPE von Pitaval, Charles, Aroulanda, Sébastien, Fouzi, Yassine, Defrance, Nicolas, Lacam, Cédric, Michel, Nicolas, El Bondry, Nadia, Oualli, Mourad, Teisseire, Laurent, Jacquet, Jean-Claude, Piotrowicz, Stéphane, Gaquiere, Christophe, Delage, Sylvain L.

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Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier von Malmros, Anna, Gamarra, Piero, Thorsell, Mattias, Hjelmgren, Hans, Lacam, Cedric, Delage, Sylvain Laurent, Zirath, Herbert, Rorsman, Niklas

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Impact of Gate-Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs von Rzin, Mehdi, Routoure, Jean-Marc, Guillet, Bruno, Mechin, Laurence, Morales, Magali, Lacam, Cedric, Gamarra, Piero, Ruterana, Pierre, Medjdoub, Farid

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The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures von Gamarra, Piero, Lacam, Cedric, Magis, Michelle, Tordjman, Maurice, Poisson, Marie-Antoinette di Forte

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High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure von Medjdoub, Farid, Kabouche, Riad, Linge, Astrid, Grimbert, Bertrand, Zegaoui, Malek, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, di Forte-Poisson, Marie-Antoinette

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The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer von Mohamad, Ranim, Chauvat, Marie Pierre, Kret, Slawomir, Gamarra, Piero, Delage, Sylvain, Hounkpati, Viwanou, Lacam, Cedric, Chen, Jun, Ruterana, Pierre

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Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices von Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, Splettstösser, Jörg, Schauwecker, Bernd, di Forte-Poisson, Marie-Antoinette

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In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs von Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, Medjdoub, Farid, di Forte-Poisson, Marie-Antoinette

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InAlGaN/GaN HEMTs at Cryogenic Temperatures von Dogmus, Ezgi, Kabouche, Riad, Lepilliet, Sylvie, Linge, Astrid, Zegaoui, Malek, Ben-Ammar, Hichem, Chauvat, Marie-Pierre, Ruterana, Pierre, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, Medjdoub, Farid

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design von Bisi, Davide, Chini, Alessandro, Soci, Fabio, Stocco, Antonio, Meneghini, Matteo, Pantellini, Alessio, Nanni, Antonio, Lanzieri, Claudio, Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, di-Forte-Poisson, Marie-Antoinette, Meneghesso, Gaudenzio, Zanoni, Enrico

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Effects of Surface Passivation and Deposition Methods on the 1/ f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors von Do, Thanh Ngoc Thi, Malmros, Anna, Gamarra, Piero, Lacam, Cedric, Di Forte-Poisson, Marie-Antoinette, Tordjman, Maurice, Horberg, Mikael, Aubry, Raphael, Rorsman, Niklas, Kuylenstierna, Dan

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Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT von Pitaval, Charles, Lacam, Cédric, Defrance, N., Gaquière, Christophe, Michel, Nicolas, Parillaud, Olivier, Delage, Sylvain

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InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications von Piotrowicz, Stéphane, Jacquet, Jean-Claude, Gamarra, Piero, Patard, Olivier, Dua, Christian, Chartier, Eric, Michel, Nicolas, Oualli, Mourad, Lacam, Cedric, Potier, Clément, Altuntas, Philippe, Delage, Sylvain

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Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation von Malmros, Anna, Gamarra, Piero, Thorsell, Mattias, Forte-Poisson, Marie-Antoinette di, Lacam, Cedric, Tordjman, Maurice, Aubry, Raphaël, Zirath, Herbert, Rorsman, Niklas

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The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys von GAMARRA, Piero, LACAM, Cedric, MAGIS, Michelle, TORDJMAN, Maurice, DI FORTE POISSON, Marie-Antoinette

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The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template von BEN AMMAR, H., MINJ, A., CHAUVAT, M.‐P., GAMARRA, P., LACAM, C., MORALES, M., RUTERANA, P.

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Epitaxie sélective en phase vapeur aux organométalliques pour la modulation de la longueur d'onde de multipuits quantiques InGaN/GaN von Lacam, Cédric

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