UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping von Wohlfahrt, Markus, Uren, Michael J., Kaess, Felix, Laboutin, Oleg, Hirshy, Hassan, Kuball, Martin

Volltext

Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam von Uedono, Akira, Fujishima, Tatsuya, Cao, Yu, Zhang, Yang, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

Volltext

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam von Uedono, Akira, Fujishima, Tatsuya, Piedra, Daniel, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

Volltext

Device Delay in GaN Transistors Under High Drain Bias Conditions von Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

Volltext

Impact of \hbox\hbox Passivation Thickness in Highly Scaled GaN HEMTs von Dong Seup Lee, Laboutin, O., Yu Cao, Johnson, W., Beam, E., Ketterson, A., Schuette, M., Saunier, P., Palacios, T.

Volltext

Nanowire Channel InAlN/GaN HEMTs With High Linearity of g and f von Lee, Dong Seup, Wang, Han, Hsu, Allen, Azize, Mohamed, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

Volltext

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation von Ronghua Wang, Guowang Li, Laboutin, O., Yu Cao, Johnson, W., Snider, G., Fay, P., Jena, D., Huili Xing

Volltext

Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT von DONG SEUP LEE, HAN WANG, SAUNIER, Paul, PALACIOS, Tomás, ALLEN HSU, AZIZE, Mohamed, LABOUTIN, Oleg, YU CAO, JOHNSON, Jerry Wayne, BEAM, Edward, KETTERSON, Andrew, SCHUETTE, Michael L

Volltext

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs von Ronghua Wang, Guowang Li, Verma, J., Sensale-Rodriguez, B., Tian Fang, Jia Guo, Zongyang Hu, Laboutin, O., Yu Cao, Johnson, W., Snider, G., Fay, P., Jena, D., Huili Xing

Volltext

Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz von Ronghua Wang, Guowang Li, Karbasian, G., Jia Guo, Bo Song, Yuanzheng Yue, Zongyang Hu, Laboutin, O., Yu Cao, Johnson, W., Snider, G., Fay, P., Jena, D., Xing, H. G.

Volltext

Controlled Synthesis of AlN/GaN Multiple Quantum Well Nanowire Structures and Their Optical Properties von Qian, Fang, Brewster, Megan, Lim, Sung K, Ling, Yichuan, Greene, Christopher, Laboutin, Oleg, Johnson, Jerry W, Gradečak, Silvija, Cao, Yu, Li, Yat

Volltext

Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs von DONG SEUP LEE, LABOUTIN, Oleg, YU CAO, JOHNSON, Wayne, BEAM, Edward, KETTERSON, Andrew, SAUNIER, Paul, PALACIOS, Tomás

Volltext

Differences in nucleation and properties of InN islands formed using two different deposition procedures von Laboutin, Oleg, Johnson, Wayne, Welser, Roger

Volltext

GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes von Chern, Kevin T., Allen, Noah P., Ciarkowski, Timothy A., Laboutin, Oleg A., Welser, Roger E., Guido, Louis J.

Volltext

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and $f_{\text{T}}/f_{\text{max}}$ of 260/220 GHz von Wang, Ronghua, Li, Guowang, Karbasian, Golnaz, Guo, Jia, Faria, Faiza, Hu, Zongyang, Yue, Yuanzheng, Verma, Jai, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Xing, Huili (Grace)

Volltext

Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yang, Jiancheng, Ren, Fan, Lo, Chien-Fong, Laboutin, Oleg, Johnson, J. W., Pearton, S. J.

Volltext

Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions von Hwang, Ya-Shi, Liu, Lu, Ren, Fan, Polyakov, Alexander Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Kolin, N. G., Boiko, V. M., Vereyovkin, S. S., Ermakov, V. S., Lo, Chien-Fong, Laboutin, Oleg, Cao, Y., Johnson, J. W., Kargin, N. I., Ryzhuk, R. V., Pearton, Stephen J.

Volltext

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability von Liu, Lu, Lo, Chien-Fong, Xi, Yuyin, Ren, Fan, Pearton, Stephen J., Laboutin, Oleg, Cao, Yu, Johnson, J. Wayne, Kravchenko, Ivan I.

Volltext

Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates von Lo, Chien-Fong, Kao, Chen-Kai, Laboutin, Oleg, Marchand, Hugues, Pelzel, Rodney, Johnson, Wayne

Volltext

Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam von Uedono, Akira, Yoshihara, Nakaaki, Zhang, Yuhao, Sun, Min, Piedra, Daniel, Fujishima, Tatsuya, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

Volltext