Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy von Ponchet, A., Le Corre, A., L’Haridon, H., Lambert, B., Salaün, S.

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Optical activation of Er3+ implanted in silicon by oxygen impurities von FAVENNEC, P. N, L'HARIDON, H, MOUTONNET, D, SALVI, M, GAUNEAU, M

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The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system von Ponchet, A., Le Corre, A., L'Haridon, H., Lambert, B., Salaün, S., Alquier, D., Lacombe, D., Durand, L.

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Structural aspects of the growth of InAs islands on InP substrate von Ponchet, A, Le Corre, A, L'Haridon, H, Lambert, B, Salaün, S, Groenen, J, Carles, R

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Epitaxial liftoff microcavities for 1.55-μm quantum-well spatial light modulators von De Matos, C., L'Haridon, H., Le Corre, A., Lever, R., Keromnes, J.C., Ropars, G., Vaudry, C., Lambert, B., Pugnet, M.

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Characterization of Ca1-xErxF2+x solid solution thin films grown on Si(100) substrates von BARRIERE, A. S, MOMBELLI, B, PORTE, B, RAOUX, S, GUEGAN, H, REAU, M, L'HARIDON, H, MOUTONNET, D

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Anomalous behavior of ion-implanted GaSb von CALLEC, R, FAVENNEC, P. N, SALVI, M, L'HARIDON, H, GAUNEAU, M

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Spatial modulation of the dielectric function using free carriers and/or coherent effects in quantum-well semiconductor microcavity von De Matos, C., Pugnet, M., L’Haridon, H., Le Corre, A.

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Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering von Kechouane, M., Beldi, N., Mouheb, O., Mohammed-Brahim, T., Barriere, A. S., L'Haridon, H., Gauneau, M.

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Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga062In038As superlattices von CLEROT, F, L'HARIDON, H, LE CORRE, A, GODEFROY, A, SALAÜN, S, PONCHET, A

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Scanning photoluminescence technique: application to defect recovery of ion-implanted InP von L'Haridon, H, Favennec, P N, Salvi, M

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Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100) von Fréchengues, S., Drouot, V., Lambert, B., Lemoine, D., Loualiche, S., Le Corre, A., L’Haridon, H.

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Erbium implanted in III-V materials von ROCHAIX, C, ROLLAND, A, FAVENNEC, P. N, LAMBERT, B, LE CORRE, A, L'HARIDON, H, SALVI, M

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Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers von L'Haridon, H., Le Corre, A., Salaün, S., Lecrosnier, D., Passaret, A., Godefroy, A., Gauneau, M.

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Crystalline characterization by Rutherford backscattering spectrometry and electron channeling of in situ grown YBa2Cu3O7 thin films deposited on (100) MgO by d.c. sputtering or la... von KECHOUANE, M, L'HARIDON, H, SALVI, M, FAVENNEC, P. N, GAUNEAU, M, GUILLOUX-VIRY, M, KARKUT, M. G, THIVET, C, PERRIN, A

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A composite layer of Al-Er-O particles in a silicon matrix von SALVI, M, L'HARIDON, H, FAVENNEC, P. N, MOUTONNET, D, GAUNEAU, M, KECHOUANE, M

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Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm von De Matos, C., Le Corre, A., L’Haridon, H., Gosselin, S., Lambert, B.

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Spatial investigation of an iron-doped indium phosphide ingot von L'Haridon, H., Favennec, P.N., Coquille, R., Salvi, M., Gauneau, M., Le Guillou, Y., Callec, R., Gall, P.

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Inhomogeneity in a semi-insulating indium phosphide ingot von L'Haridon, H., Callec, R., Coquillé, R., Favennec, P.N., Fillard, J.P., Gall, P., Gauneau, M., Le Guillou, Y.

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High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm von LAMBERT, B, LE CORRE, A, DROUOT, V, L'HARIDON, H, LOUALICHE, S

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