Thermoelectric properties of Ni/Ge-multilayer-laminated silicon von Kim, Kyongmin, Mun, Seungeun, Jang, Moongyu, Sok, Junghyun, Park, Kyoungwan

Volltext

SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors von Kim, Eunkyeom, Kim, Youngill, Han Kim, Do, Lee, Kyoungmi, Parsons, Gregory N., Park, Kyoungwan

Volltext

Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices von Kim, Kyongmin, Kim, Eunkyeom, Kim, Youngill, Sok, Jung Hyun, Park, Kyoungwan

Volltext

Properties of Resistive Switching in TiO₂ Nanocluster-SiOx(x<2) Matrix Structure von Song, Seunggon, Kim, Kyongmin, Jung, Kyun Ho, Sok, Junghyun, Park, Kyoungwan

Volltext

CD4+/CD8+ Ratio and Growth Differentiation Factor 8 Levels in Peripheral Blood of Large Canine Males Are Useful Parameters to Build an Age Prediction Model von Lee, Han-Jun, Hong, Seok-Jin, Kim, Seung-Soo, Kwon, Young-Yon, Choi, Bong-Hwan, Choi, Kyung-Mi, Sheen, Seo-Hyeong, Lee, Myung-Jin, Hwang, Sun-Young, Park, Kyoungwan, Joo, Younghun, Song, Hwayoung, Lee, Cheol-Koo

Volltext

A 50-nm-gate-length erbium-silicided n -type Schottky barrier metal-oxide-semiconductor field-effect transistor von Jang, Moongyu, Kim, Yarkyeon, Shin, Jaeheon, Lee, Seongjae, Park, Kyoungwan

Volltext

Effects of double SiOx (x < 2) ultra-thin layers on bipolar resistive switching of ZnO-based nonvolatile memory von Jung, Kyunho, Kim, Kyongmin, Song, Seunggon, Park, Kyoungwan

Volltext

Effects of double SiO (x < 2) ultra-thin layers on bipolar resistive switching of ZnO-based nonvolatile memory von Jung, Kyunho, Kim, Kyongmin, Song, Seunggon, Park, Kyoungwan

Volltext

Characteristics of erbium-silicided n -type Schottky barrier tunnel transistors von Jang, Moongyu, Oh, Jihun, Maeng, Sunglyul, Cho, Wonju, Lee, Seongjae, Kang, Kicheon, Park, Kyoungwan

Volltext

Simulation of Schottky barrier tunnel transistor using simple boundary condition von Jang, Moongyu, Kang, Kicheon, Lee, Seongjae, Park, Kyoungwan

Volltext

Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications von JANG, Moongyu, LEE, Seongjae, PARK, Kyoungwan

Volltext

Characteristics of resistive switching in ZnO/SiO x multi-layers for transparent nonvolatile memory devices von Kim, Kyongmin, Kim, Eunkyeom, Kim, Youngill, Sok, Jung Hyun, Park, Kyoungwan

Volltext

Potential applications of nanoscale semiconductor quantum devices for information and telecommunications technologies von Lee, El-Hang, Park, Kyoungwan

Volltext

Dual dielectric tunnel barrier in silicon-rich silicon nitride charge-trap nonvolatile memory von Kim, Eunkyeom, Yim, Taekyung, An, Seungman, Cho, Won-Ju, Park, Kyoungwan

Volltext

Enhancement of light emission from silicon nanocrystals by post- O 2 -annealing process von Park, Byoung Youl, Lee, Sol, Park, Kyoungwan, Bae, Chang Hyun, Park, Seung Min

Volltext

SiN x charge-trap nonvolatile memory based on ZnO thin-film transistors von Kim, Eunkyeom, Kim, Youngill, Han Kim, Do, Lee, Kyoungmi, Parsons, Gregory N., Park, Kyoungwan

Volltext

First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces von Yu, Byung Deok, Park, Kyoungwan, Kim, Hanchul, Chung, Chun-Hyung, Yeom, Han Woong, Lyo, In-Whan, Kong, Ki-jeong, Miyamoto, Yoshiyuki, Sugino, Osamu, Ohno, Takahisa

Volltext

Characteristics of Schottky barrier silicon nanocluster floating gate flash memory von Son, Daeho, Kim, Jeongho, Lee, Kyungsu, Won, Sunghwan, Kim, Eunkyeom, Kim, Tae-Youb, Jang, Moongyu, Park, Kyoungwan

Volltext

Enhancement of light emission from silicon nanocrystals by post-O2-annealing process von Park, Byoung Youl, Lee, Sol, Park, Kyoungwan, Bae, Chang Hyun, Park, Seung Min

Volltext

Fabrication and Process Simulation of SOI MOSFETs with a 30-nm Gate Length von Cho, Won-ju, Yang, Jong-heon, Im, Kiju, Oh, Jihoon, Lee, Seongjae, Park, Kyoungwan

Volltext