Intrinsic multiple quantum well spatial light modulators von Rabinovich, W. S., Bowman, S. R., Katzer, D. S., Kyono, C. S.

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Graded-channel MOSFET (GCMOSFET) for high performance, low voltage DSP applications von Jun Ma, Han-Bin Liang, Pryor, R.A., Cheng, S., Kaneshiro, M.H., Kyono, C.S., Papworth, K.

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Analysis of ultrafast photocarrier transport in AlInAs-GaInAs heterojunction bipolar transistors von Frankel, M.Y., Carruthers, T.F., Kyono, C.S.

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High-resolution spatial light modulators using GaAs/AlGaAs multiple quantum wells von Bowman, S. R., Rabinovich, W. S., Kyono, C. S., Katzer, D. S., Ikossi-Anastasiou, K.

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Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach von Paulsen, R.E., Kyono, C.S., Wang, Y., Klein, K.M., Lim, I.-S., Tinkler, S., Bellamak, B., Odle, D.W., Zhou, Z., Dahl, P., Giovanetto, M., Makwana, J., Patel, S., Reno, C., Lenahan, P.M., Billman, C.A.

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GaAs/AlGaAs multiquantum well resonant photorefractive devices fabricated using epitaxial lift-off von Kyono, C. S., Ikossi-Anastasiou, K., Rabinovich, W. S., Bowman, S. R., Katzer, D. S., Tsao, A. J.

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Ultrafast photodetection with an AlInAs/GaInAs heterojunction bipolar transistor von Carruthers, T. F., Frankel, M. Y., Kyono, C. S.

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Wet chemical etching with lactic acid solutions for InP-based semiconductor devices von IKOSSI-ANASTASIOU, K, BINARI, S. C, KELNER, G, BOOS, J. B, KYONO, C. S, MITTEREDER, J, GRIFFIN, G. L

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Dynamic white light holography using an optically addressed multiple quantum well spatial light modulator von Adler, C.L, Rabinovich, W.S, Bowman, S.R, Feldman, B.J, Katzer, D.S, Kyono, C.S

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Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy von KYONO, C. S, KESAN, V. P, NEIKIRK, D. P, MAZIAR, C. M, STREETMAN, B. G

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Diode structures from amorphous low-temperature GaAs von Kyono, C. S., Tadayon, B., Twigg, M. E., Giordana, A., Simons, D. S., Fatemi, M., Tadayon, S.

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Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase von Giordana, A., Glembocki, O. J., Glaser, E. R., Gaskill, D. K., Kyono, C. S., Twigg, M. E., Fatemi, M., Tadayon, B., Tadayon, S.

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Sequential etch analysis of electron injection in p+-GaAs von KLAUSMEIER-BROWN, M. E, KYONO, C. S, DEMOULIN, P. D, TOBIN, S. P, LUNDSTROM, M. S, MELLOCH, M. R

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High-speed semiconductor devices for communication systems von Valsaraj, N., Sabbah, R., Jones, W., Ikossi-Anastasiou, K., Kyono, C.S., Binari, S.C., Kruppa, W., Dietrich, H.

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Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy von RANCOUR, D. P, MELLOCH, M. R, PIERRET, R. F, LUNDSTROM, M. S, KLAUSMEIER-BROWN, M. E, KYONO, C. S

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Phonon broadening of excitons in GaAs/AlxGa1-xAs quantum wells von Gammon, D, Rudin, S, Reinecke, TL, Katzer, DS, Kyono, CS

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Observation of extremely large sheet hole densities in uncapped undoped AlSb layers von Tadayon, B., Kyono, C.S., Godbey, D.J., Tadayon, S., Mittereder, J.A.

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Titanium dioxide particle-induced goblet cell hyperplasia: association with mast cells and IL-13 von Ahn, Mi-Hyun, Kang, Chun-Mi, Park, Choon-Sik, Park, Sang-Jun, Rhim, Taiyoun, Yoon, Pyeong-Oh, Chang, Hun Soo, Kim, Soo-Ho, Kyono, Hiroko, Kim, Kwang Chul

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