Graded-channel MOSFET (GCMOSFET) for high performance, low voltage DSP applications von Jun Ma, Han-Bin Liang, Pryor, R.A., Cheng, S., Kaneshiro, M.H., Kyono, C.S., Papworth, K.

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Analysis of ultrafast photocarrier transport in AlInAs-GaInAs heterojunction bipolar transistors von Frankel, M.Y., Carruthers, T.F., Kyono, C.S.

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Intrinsic multiple quantum well spatial light modulators von Rabinovich, W. S., Bowman, S. R., Katzer, D. S., Kyono, C. S.

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Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxy von KYONO, C. S, KESAN, V. P, NEIKIRK, D. P, MAZIAR, C. M, STREETMAN, B. G

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Ultrafast photodetection with an AlInAs/GaInAs heterojunction bipolar transistor von Carruthers, T. F., Frankel, M. Y., Kyono, C. S.

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Wet chemical etching with lactic acid solutions for InP-based semiconductor devices von IKOSSI-ANASTASIOU, K, BINARI, S. C, KELNER, G, BOOS, J. B, KYONO, C. S, MITTEREDER, J, GRIFFIN, G. L

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Dynamic white light holography using an optically addressed multiple quantum well spatial light modulator von Adler, C.L, Rabinovich, W.S, Bowman, S.R, Feldman, B.J, Katzer, D.S, Kyono, C.S

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Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase von Giordana, A., Glembocki, O. J., Glaser, E. R., Gaskill, D. K., Kyono, C. S., Twigg, M. E., Fatemi, M., Tadayon, B., Tadayon, S.

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Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach von Paulsen, R.E., Kyono, C.S., Wang, Y., Klein, K.M., Lim, I.-S., Tinkler, S., Bellamak, B., Odle, D.W., Zhou, Z., Dahl, P., Giovanetto, M., Makwana, J., Patel, S., Reno, C., Lenahan, P.M., Billman, C.A.

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High-resolution spatial light modulators using GaAs/AlGaAs multiple quantum wells von Bowman, S. R., Rabinovich, W. S., Kyono, C. S., Katzer, D. S., Ikossi-Anastasiou, K.

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Diode structures from amorphous low-temperature GaAs von Kyono, C. S., Tadayon, B., Twigg, M. E., Giordana, A., Simons, D. S., Fatemi, M., Tadayon, S.

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GaAs/AlGaAs multiquantum well resonant photorefractive devices fabricated using epitaxial lift-off von Kyono, C. S., Ikossi-Anastasiou, K., Rabinovich, W. S., Bowman, S. R., Katzer, D. S., Tsao, A. J.

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Sequential etch analysis of electron injection in p+-GaAs von KLAUSMEIER-BROWN, M. E, KYONO, C. S, DEMOULIN, P. D, TOBIN, S. P, LUNDSTROM, M. S, MELLOCH, M. R

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Effect of boron on gate oxide degradation and reliability in PMOS devices von Brozek, Tomasz, Kyono, Carl, Ilderem, Vida

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Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy von RANCOUR, D. P, MELLOCH, M. R, PIERRET, R. F, LUNDSTROM, M. S, KLAUSMEIER-BROWN, M. E, KYONO, C. S

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Simulation and verification of the hot carrier degradation behavior in an analog high-voltage device with graded channel profile von Thoma, Rainer, Zhao, Hui, Martin, Matthew, Kyono, Carl

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Signal integrity implications of inductor-to-circuit proximity von Secareanu, R.M., Qiang Li, Bharatan, S., Kyono, C., Thoma, R., Miller, M., Hartin, O.

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Gain enhancement in InAlAs/InGaAs heterojunction bipolar transistors using an emitter ledge von Kyono, C. S., Binari, S. C., Ikossi-Anastasiou, K.

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Phonon broadening of excitons in GaAs/AlxGa1-xAs quantum wells von Gammon, D, Rudin, S, Reinecke, TL, Katzer, DS, Kyono, CS

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Ultrafast photodetection with an AllnAs/GalnAs heterojunction bipolar transistor von CARRUTHERS, T. F, FRANKEL, M. Y, KYONO, C. S

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