Trap-limited migration of Si self-interstitials at room temperature von Kyllesbech Larsen K, Privitera, V, V, Coffa, S, Priolo, F, Campisano, SU, Carnera, A

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High temperature annealing effects on the electrical characteristics of C implanted Si von Lombardo, S., Cacciato, A., Larsen, K. Kyllesbech, Raineri, V., La Via, F., Privitera, V., Campisano, S. U.

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Heavy doping effects in the diffusion of group IV and V impurities in silicon von LARSEN, A. N, LARSEN, K. K, ANDERSEN, P. E, SVENSSON, B. G

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Enhanced interdiffusion in amorphous Ni-Zr thin films under tensile strain von Karpe, N., Larsen, K. Kyllesbech, Bøttiger, J.

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Electrical transport in (100)CoSi2/Si contacts von Lauwers, A., Kyllesbech Larsen, K., Van Hove, M., Verbeeck, R., Maex, K., Van Rossum, M., Vercaemst, A., Van Meirhaeghe, R., Cardon, F.

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Increase in the infrared response of silicide Schottky barrier diodes by grain boundary scattering von Roca, E., Larsen, K. Kyllesbech, Kolodinski, S., Mertens, R.

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Lowered interdiffusivity in thin amorphous Ni-Zr films with large composition gradients von Bøttiger, J., Chechenin, N. G., Greer, A. L., Karpe, N., Krog, J. P., Larsen, K. Kyllesbech

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On the phase formation during ion beam mixing of Al-Ti von Kyllesbech Larsen, K., Skovmand, S., Karpe, N., Bøttiger, J., Bormann, R.

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Evidence for phase separation in amorphous Fe-Zr from chemical diffusion von Karpe, N., Bøttiger, J., Janting, J., Larsen, K. Kyllesbech

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Influence of grain boundary scattering in the infrared response of silicide Schottky barrier diodes von Roca, E., Larsen, K. Kyllesbech, Kolodinski, S., Mertens, R.

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Secondary defect annihilation in ion beam processed Si x Ge1− x layers using titanium silicide von Kyllesbech Larsen, K., La Via, F., Lombardo, S., Raineri, V., Campisano, S. U.

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Characterization of C coimplanted Ge x Si1− x epitaxial layers formed by high dose Ge ion implantation in (100) Si von Lombardo, S., Larsen, K. Kyllesbech, Raineri, V., La Via, F., Campisano, S. U., Lagomarsino, S., Kazimirov, A.

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Time scales of transient enhanced diffusion: free and clustered interstitials von Cowern, N.E.B., Huizing, H.G.A., Stolk, P.A., Visser, C.C.G., de Kruif, R.C.M., Kyllesbech Larsen, K., Privitera, V., Nanver, L.K., Crans, W.

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The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants von Kyllesbech Larsen, K., Privitera, V., Coffa, S., Priolo, F., Spinella, C., Saggio, M., Campisano, S.U.

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Growth of epitaxial β-FeSi2 on (100) silicon using Fe–Ti–Si diffusion couples von Larsen, K. Kyllesbech, Tavares, J., Bender, H., Donaton, R. A., Lauwers, A., Maex, K.

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Energetic model of ferromagnetic hysteresis 2: magnetization calculations of (110)[001] FeSi sheets by static domain behavior von Lauwers, A, Kyllesbech Larsen, K, Van Hove, M, Verbeeck, R, Maex, K, Van Rossum, M, Vercaemst, A, Van Meirhaeghe, R, Cardon, F

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Phase formation induced by ion irradiation and electrical resistivity of aluminum-3d-transition-metal alloys von Karpe, N, Larsen, KK, Bottiger, J

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The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon von Nylandsted Larsen, A., Andersen, P.E., Gaiduk, P., Kyllesbech Larsen, K.

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Phase formation induced by ion irradiation and electrical resisitivy of aluminum-3d-transition-metal alloys von KARPE, N, KYLLESBECH LARSEN, K, BØTTIGER, J

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Phase formation induced by ion irradiation and electrical resistivity of aluminum–3 d -transition-metal alloys von Karpe, N., Larsen, K. Kyllesbech, Bo/ttiger, J.

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