Influence of scattering on the I-V characteristics of double-barrier resonant-tunneling diodes von van de Roer, T.G., Kwaspen, J.J.M., Joosten, H., Noteborn, H., Lenstra, D., Henini, M.

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Microwave noise behaviour of resonant tunnelling diodes von Kwaspen, J.J.M., Heyker, H.C., van de Roer, Th.G.

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Hot Electron Injection Laser Controlled Carrier-Heating Induced Gain Switching von Hoskens, R.C.P., van de Roer, T.G., Smalbrugge, E., Kwaspen, J.J.M., Tolstikhin, V.I., Tan, H.H., Jagadish, C., Acket, G.A.

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Realisation of submicron gate MESFETs using standard optical photolithography von Kalfane, A., Karouta, F., Heyker, H.C., Kwaspen, J.J.M.

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Three terminal double barrier resonant tunneling devices with the base contact to the quantum well von Lepsa, M.I., van de Roer, Th.G., Kwaspen, J.J.M., Smalbrugge, E., van der Vleuten, W., Kaufmann, L.M.F.

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Microwave analysis of double barrier resonant tunneling diodes von Lepsa, M.I., Kwaspen, J.J.M., van de Roer, T.G., van der Vleuten, W., Kaufmann, L.M.F.

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